TN0201K/TN0201KL
Vishay Siliconix
New Product
N-Channel 20−V (D−S) MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS
Min (V)
20
D TrenchFETr Power MOSFET
ID (A)
rDS(on)
DS( )
Max (W)
VGS(th) (V)
1.0 @ VGS = 10 V
1.4 @ VGS = 4.5 V
TN0201K
TN0201KL
0.42
0.64
0.35
0.53
1 0 to 3
1.0
3.0
0
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
G
1
S
2
TO-226AA
(TO-92)
3
S
1
G
2
“S” TN
0201KL
xxyy
3
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
D
D
Top View
TN0201K
Top View
Marking Code: K3ywl
TN0201KL
K3 = Part Number Code for TN0201K
y = Year Code
w = Week Code
l = Lot Traceability
Ordering Information: TN0201K-T1—E3 (Lead Free)
Ordering Information: TN0201KL-TR1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Symbol
TN0201K
TN0201KL
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
TA= 25_C
TA= 70_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
ID
IDM
TA= 25_C
TA= 70_C
PD
RthJA
TJ, Tstg
V
0.42
0.64
0.33
0.51
0.8
1.5
0.35
0.8
0.22
0.51
357
156
−55 to 150
Unit
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
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TN0201K/TN0201KL
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 10 mA
20
VGS(th)
VDS = VGS, ID = 0.25 mA
1.0
2.0
3.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55_C
10
On State Drain Currenta
On-State
ID(on)
D( )
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistancea
VDS = 10 V
V, VGS = 10 V
Diode Forward Voltage
0.5
TN0201KL
0.8
nA
mA
A
VGS = 4.5 V, ID = 0.1 A
0.8
1.4
VGS = 10 V, ID = 0.3 A
0.47
1.0
gfs
VDS = 10 V, ID = 0.3 A
550
VSD
IS = 0.3 A, VGS = 0 V
0.85
1.2
1000
1500
rDS(on)
Forward Transconductancea
TN0201K
V
W
mS
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
200
Gate Resistance
Rg
48
VDS = 16 V, VGS = 10 V
ID ^ 0.3 A
205
td(on)
Turn On Time
Turn-On
VDD = 15 V, RL = 50 W
ID ^ 0.3
03A
A, VGEN = 10 V
RG = 6 W
tr
td(off)
Turn-Off Time
tf
pC
W
4.5
8
8
15
9
15
6.3
12
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0
0.8
VGS = 10 thru 5 V
0.7
4V
0.8
I D − Drain Current (A)
I D − Drain Current (A)
0.6
0.5
0.4
0.3
0.2
3V
0.6
0.4
TJ = 125_C
0.2
0.1
0.0
0.0
25_C
2V
0.4
0.8
1.2
1.6
VDS − Drain-to-Source Voltage (V)
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2
−55_C
0.0
2.0
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
50
1.2
40
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
On-Resistance vs. Drain Current
1.5
VGS = 4.5 V
0.9
VGS = 10 V
0.6
0.3
0.0
0.0
Ciss
30
Coss
20
Crss
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
4
ID − Drain Current (A)
Gate Charge
20
On-Resistance vs. Junction Temperature
VDS = 16 V
ID = 0.3 A
r DS(on) − On-Resistance ( W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
16
1.6
8
6
4
2
VGS = 10 V
ID = 0.3 A
1.4
1.2
VGS = 4.5 V
ID = 0.1 A
1.0
0.8
0
0.0
0.2
0.4
0.6
0.8
0.6
−50
1.0
−25
0
Qg − Total Gate Charge (nC)
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
3
1
TJ = 150_C
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
12
VDS − Drain-to-Source Voltage (V)
10
0.1
0.01
0.001
0.0
8
TJ = 25_C
2.0
1.6
ID = 0.3 A
1.2
0.8
0.4
0.0
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
1.2
1.4
0
4
8
12
16
20
VGS − Gate-to-Source Voltage (V)
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TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
V GS(th) Variance (V)
0.2
ID = 250 mA
−0.0
−0.2
−0.4
−0.6
−50
−25
0
25
50
75
100
125
150
TJ − Temperature (_C)
Safe Operating Area (TO-236, TN0201K Only)
Safe Operating Area (TO-226AA, TN0201KL Only)
10
10
IDM
Limited
rDS(on) Limited
rDS(on) Limited
10 ms
0.1
ID(on)
Limited
100 ms
1s
10 s
dc
TA = 25_C
Single Pulse
0.01
BVDSS Limited
0.001
0.1
1
1 ms
1
1 ms
I D − Drain Current (A)
I D − Drain Current (A)
1
IDM
Limited
0.1
0.01
10 ms
ID(on)
Limited
10
100
1s
dc
TA = 25_C
Single Pulse
BVDSS Limited
0.001
0.1
VDS − Drain-to-Source Voltage (V)
100 ms
10 s
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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