TNPW0603154KBHEA

TNPW e3 www.vishay.com Vishay High Stability Thin Film Flat Chip Resistors FEATURES • Rated dissipation P70 up to 0.52 W for size 1206 • • • • • AEC-Q200 qualified Single lot date code (optional) Permissible film temperature up to 175 °C Superior temperature cycling robustness Excellent overall stability at different environmental conditions • Superior moisture resistivity, |ΔR/R| < 0.1 % (85 °C; 85 % RH; 1000 h) Vishay Automotive Grade TNPW e3 thin film flat chip resistors are the perfect choice for most fields of modern electronics where highest reliability and stability is of major concern. Typical applications include automotive, industrial, test and measuring equipment, and medical equipment. • Advanced sulfur resistance verified according to ASTM B 809 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • Automotive Industrial equipment with enhanced requirements Test and measuring equipment Medical equipment TECHNICAL SPECIFICATIONS DESCRIPTION TNPW0201 e3 Imperial size 0201 Metric size code RR0603M Resistance range 22 Ω to 40 kΩ Resistance tolerance ± 0.5 %; ± 0.1 % Temperature coefficient ± 25 ppm/K 0.075 W Rated dissipation, P70 (1) Operating voltage, 25 V Umax. ACRMS or DC Permissible film temperature, ϑF max. (1) Operating temperature range (2) Internal thermal resistance (typical) (1) Permissible voltage against ambient (insulation): 1 min; Uins 50 V Failure rate: FITobserved TNPW0402 e3 0402 RR1005M 10 Ω to 100 kΩ 0.130 W 50 V TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 TNPW1210 e3 0603 0805 1206 1210 RR1608M RR2012M RR3216M RR3225M 1 Ω to 332 kΩ 1 Ω to 1 MΩ 1 Ω to 2 MΩ 10 Ω to 3.01 MΩ ± 1 %; ± 0.5 %; ± 0.1 % ± 50 ppm/K; ± 25 ppm/K; ± 15 ppm/K; ± 10 ppm/K 0.210 W 0.260 W 0.520 W 0.500 W 75 V 150 V 200 V 200 V 32 K/W - 300 V 300 V 175 °C -55 °C to 175 °C 90 K/W 75 V 63 K/W 38 K/W 100 V 200 V ≤ 0.1 x 10-9/h Notes (1) Please refer to APPLICATION INFORMATION (2) Please refer to table MAXIMUM RESISTANCE CHANGE AT RATED DISSIPATION, see below APPLICATION INFORMATION When the resistor dissipates power, a temperature rise above the ambient temperature occurs, dependent on the thermal resistance of the assembled resistor together with the printed circuit board. The rated dissipation applies only if the permitted film temperature is not exceeded. Please consider the application note “Thermal Management in Surface-Mounted Resistor Applications” (www.vishay.com/doc?28844) for information on the general nature of thermal resistance. These resistors do not feature a limited lifetime when operated within the permissible limits. However, resistance value drift increasing over operating time may result in exceeding a limit acceptable to the specific application, thereby establishing a functional lifetime. Revision: 26-Sep-2023 Document Number: 28758 1 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay MAXIMUM RESISTANCE CHANGE AT RATED DISSIPATION OPERATION MODE GENERAL POWER ADVANCED TNPW0201 e3 0.050 W 0.075 W - TNPW0402 e3 0.070 W 0.105 W 0.130 W TNPW0603 e3 0.110 W 0.170 W 0.210 W TNPW0805 e3 0.140 W 0.220 W 0.260 W TNPW1206 e3 0.270 W 0.420 W 0.520 W TNPW1210 e3 0.330 W 0.500 W - -55 °C to 125 °C -55 °C to 155 °C -55 °C to 175 °C 125 °C 155 °C 175 °C Rated dissipation, P70 Operating temperature range Permissible film temperature, ϑF max. Max. resistance change at P70 for resistance range, |ΔR/R| after: TNPW0201 e3 22 Ω to 40 kΩ TNPW0402 e3 10 Ω to 100 kΩ TNPW0603 e3 1 Ω to 332 kΩ TNPW0805 e3 1 Ω to 1 MΩ TNPW1206 e3 1 Ω to 2 MΩ TNPW1210 e3 1 Ω to 3.01 MΩ 1000 h ≤ 0.05 % ≤ 0.10 % ≤ 0.20 % 8000 h ≤ 0.10 % ≤ 0.20 % - 225 000 h ≤ 0.30 % ≤ 0.60 % - Note • The presented operation modes do not refer to different types of resistors, but actually show examples of different loads, that lead to different film temperatures and different achievable load-life stability (drift) of the resistance value. A suitable low thermal resistance of the circuit board assembly must be safeguarded in order to maintain the film temperature of the resistors within the specified limits. Please consider the application note “Thermal Management in Surface-Mounted Resistor Applications” (www.vishay.com/doc?28844) for information on the general nature of thermal resistance Revision: 26-Sep-2023 Document Number: 28758 2 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay TEMPERATURE COEFFICIENT AND RESISTANCE RANGE TYPE / SIZE TNPW0201 e3 TCR ± 25 ppm/K TOLERANCE ± 0.5 % 22 Ω to 40 kΩ ± 0.1 % 22 Ω to 25 kΩ ±1% ± 50 ppm/K ± 0.5 % ± 0.1 % TNPW0402 e3 ±1% ± 25 ppm/K RESISTANCE ± 0.5 % 10 Ω to 100 kΩ 47 Ω to 100 kΩ 10 Ω to 100 kΩ ± 0.1 % ± 15 ppm/K ± 10 ppm/K ± 0.1 % ±1% ± 50 ppm/K ± 0.5 % ± 0.1 % TNPW0603 e3 ±1% ± 25 ppm/K ± 15 ppm/K ± 10 ppm/K ± 0.5 % 1 Ω to 332 kΩ ± 0.1 % 47 Ω to 332 kΩ ± 0.5 % ±1% ± 25 ppm/K 3.5 Ω to 332 kΩ 3.5 Ω to 332 kΩ ± 0.1 % TNPW0805 e3 1 Ω to 332 kΩ ± 0.1 % ±1% ± 50 ppm/K 47 Ω to 100 kΩ ± 0.5 % 1 Ω to 1 MΩ 3.5 Ω to 1 MΩ 1 Ω to 1 MΩ ± 0.1 % ± 15 ppm/K ± 10 ppm/K ± 0.1 % ±1% ± 50 ppm/K ± 0.5 % ± 0.1 % TNPW1206 e3 ±1% ± 25 ppm/K ± 15 ppm/K ± 10 ppm/K ± 0.5 % 1 Ω to 2 MΩ ± 0.1 % 47 Ω to 2 MΩ ± 0.5 % ±1% ± 25 ppm/K 3.5 Ω to 2 MΩ 3.5 Ω to 2 MΩ ± 0.1 % TNPW1210 e3 1 Ω to 2 MΩ ± 0.1 % ±1% ± 50 ppm/K 3.5 Ω to 1 MΩ ± 0.5 % 10 Ω to 3.01 MΩ 47 Ω to 2.13 MΩ 10 Ω to 3.01 MΩ ± 0.1 % ± 15 ppm/K ± 10 ppm/K Revision: 26-Sep-2023 ± 0.1 % 47 Ω to 2.13 MΩ E-SERIES E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 E24; E96 E24; E192 Document Number: 28758 3 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay PACKAGING TYPE / SIZE PITCH PACKAGING DIMENSIONS 2 mm Ø 180 mm / 7" 5000 4 mm Ø 180 mm / 7" 20 000 4 mm Ø 330 mm / 13" CODE QUANTITY ET2 = EI 5000 ET7 = ED 10 000 ET2 = EI 5000 ET7 = ED 10 000 ET1 = EA ET6 = EC (1) PACKAGING STYLE WIDTH TNPW0201 e3 Paper tape according IEC 60286-3, Type 1a TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 TNPW1210 e3 8 mm Note (1) 20 000 pieces packaging is available only for resistors with TCR ± 25 ppm/K and ± 50 ppm/K PART NUMBER AND PRODUCT DESCRIPTION Part Number: TNPW12061K32DEEA T N P W 1 2 0 6 1 K 3 2 D E E A TYPE / SIZE RESISTANCE TOLERANCE TCR PACKAGING SPECIAL TNPW0201 TNPW0402 TNPW0603 TNPW0805 TNPW1206 TNPW1210 R = decimal K = thousand M = million (4 digits) B = ± 0.1 % D = ± 0.5 % F = ± 1.0 % H = ± 50 ppm/K E = ± 25 ppm/K X = ± 15 ppm/K Y = ± 10 ppm/K ED EI EA EC (E.. = lead (Pb)-free) Up to 2 digits Blank = standard 0H = single lot date code Product Description: TNPW1206 1K32 0.5 % T-9 ET1 e3 TNPW1206 1K32 0.5 % T-9 ET1 e3 TYPE / SIZE RESISTANCE TOLERANCE TCR PACKAGING LEAD (Pb)-FREE TNPW0201 TNPW0402 TNPW0603 TNPW0805 TNPW1206 TNPW1210 54R1 = 54.1 Ω 1K32 = 1320 Ω ± 0.1 % ± 0.5 % ± 1.0 % T-2 = ± 50 ppm/K T-9 = ± 25 ppm/K T-10 = ± 15 ppm/K T-13 = ± 10 ppm/K ET7 ET2 ET1 ET6 (E.. = lead (Pb)-free) e3 = pure matte tin termination finish BV 20545 = single lot date code Note • The product can be ordered using either the PART NUMBER or the PRODUCT DESCRIPTION Revision: 26-Sep-2023 Document Number: 28758 4 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay DESCRIPTION MATERIALS Production is strictly controlled and follows an extensive set of instructions established for reproducibility. A homogeneous film of special metal alloy is deposited on a high grade ceramic substrate (AI2O3) and conditioned to achieve the desired temperature coefficient. Specially designed inner contacts are deposited on both sides. A special laser is used to achieve the target value by smoothly fine trimming the resistive layer without damaging the ceramics. A further conditioning is applied in order to stabilize the trimming result. The resistor elements are covered by a protective coating designed for electrical, mechanical and climatic protection. The terminations receive a final pure matte tin on nickel plating. The result of the determined production is verified by an extensive testing procedure and optical inspection performed on 100 % of the individual chip resistors. This includes full screening for the elimination of products with a potential risk of early life failures (feasible for R ≥ 10 Ω). Only accepted products are laid directly into the tape in accordance with IEC 60286-3, Type 1a (1). Vishay acknowledges the following systems for the regulation of hazardous substances: • IEC 62474, Material Declaration for Products of and for the Electrotechnical Industry, with the list of declarable substances given therein (2) • The Global Automotive Declarable Substance List (GADSL) (3) • The REACH regulation (1907/2006/EC) and the related list of substances with very high concern (SVHC) (4) for its supply chain The products do not contain any of the banned substances as per IEC 62474, GADSL, or the SVHC list, see www.vishay.com/how/leadfree. ASSEMBLY The resistors are suitable for processing on automatic SMD assembly systems. They are suitable for automatic soldering using wave, reflow or vapour phase as shown in IEC 61760-1 (1). The encapsulation is resistant to all cleaning solvents commonly used in the electronics industry, including alcohols, esters and aqueous solutions. The suitability of conformal coatings, potting compounds and their processes, if applied, shall be qualified by appropriate means to ensure the long-term stability of the whole system. The resistors are RoHS-compliant, the pure matte tin plating provides compatibility with lead (Pb)-free and lead-containing soldering processes. Solderability is specified for 2 years after production or requalification. The permitted storage time is 20 years. The immunity of the plating against tin whisker growth has been proven under extensive testing. Hence the products fully comply with the following directives: • 2000/53/EC End-of-Life Vehicle Directive (ELV) and Annex II (ELV II) • 2011/65/EU Restriction of the Use of Hazardous Substances Directive (RoHS) with amendment 2015/863/EU • 2012/19/EU Waste Electrical and Electronic Equipment Directive (WEEE) Vishay pursues the elimination of conflict minerals from its supply chain, see the Conflict Minerals Policy at www.vishay.com/doc?49037. RELATED PRODUCTS The TNPW with SnPb termination plating is designed for those applications, where lead bearing terminations are mandatory. For ordering TNPW with SnPb terminations please refer to latest edition of datasheet TNPW (www.vishay.com/doc?31006). TNPU e3 ultra precision thin film flat chip resistors combine the proven reliability of TNPW e3 products with a most advanced level of precision and stability (www.vishay.com/doc?28779). TNPS .... ESCC high-reliability thin film chip resistors are the premium choice for design and manufacture of equipment, where matured technology and proven reliability are of utmost importance. They are regularly used in communication and research satellites and fit equally well into aircraft and military electronic systems. Approval of the TNPS .... ESCC products is granted by the European Space Components Coordination and registered in the ESCC Qualified Parts List, REP005 (www.vishay.com/doc?28789). TNPV e3 High Voltage Thin Film Flat Chip Resistors are designed for most fields of modern electronics where precision, reliability and stability at high operating voltage are primary concerns (www.vishay.com/doc?28881). Notes (1) The quoted IEC standards are also released as EN standards with the same number and identical contents (2) The IEC 62474 list of declarable substances is maintained in a dedicated database, which is available at http://std.iec.ch/iec62474 (3) The Global Automotive Declarable Substance List (GADSL) is maintained by the American Chemistry Council and available at www.gadsl.org (4) The SVHC list is maintained by the European Chemical Agency (ECHA) and available at http://echa.europa.eu/candidate-list-table Revision: 26-Sep-2023 Document Number: 28758 5 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay FUNCTIONAL PERFORMANCE Axis Title 0.4 10000 ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ 1000 1st line 2nd line 2nd line P - Power Dissipation (W) ▬▬▬ 0.3 TNPW0201 e3 TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 TNPW1210 e3 0.2 100 0.1 10 0 -50 0 50 70 ϑamb - Ambient Temperature (°C) 100 150 Derating - General Operation Axis Title 10000 0.6 ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ 0.4 ▬▬▬ 1000 1st line 2nd line 2nd line P - Power Dissipation (W) 0.5 TNPW0201 e3 TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 TNPW1210 e3 0.3 100 0.2 0.1 10 0 -50 0 50 70 ϑamb - Ambient Temperature (°C) 100 150 Derating - Power Operation Axis Title 10000 0.6 ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ 1000 0.4 1st line 2nd line 2nd line P - Power Dissipation (W) 0.5 TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 0.3 100 0.2 0.1 10 0 -50 0 50 70 ϑamb - Ambient Temperature (°C) 100 150 175 Derating - Advanced Operation Revision: 26-Sep-2023 Document Number: 28758 6 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay Permissible pulse power Pi, max. 100 W TNPW1206 e3 TNPW0805 e3 TNPW0603 e3 10 W 1W Conditions: P 0, n d 1000 and Ui d Ui, max. 0.1 W 10 µs 100 µs 1 ms 10 ms 100 ms 1s 10 s Pulse Duration t i Maximum pulse load, single pulse; applicable if P → 0 and n ≤ 1000 and Uˆ ≤ Uˆ max.; for permissible resistance change ± (0.5 % R + 0.05 Ω) Single Pulse Permissible pulse power Pi, max. 100 W TNPW1206 e3 TNPW0805 e3 10 W TNPW0603 e3 1W Conditions: Pmax. d Pmax. (including derating) and Ui d Ui, max. 0.1 W 10 µs 100 µs 1 ms 10 ms 100 ms 1s 10 s Pulse Duration t i Maximum pulse load, continuous pulse; applicable if P ≤ P (ϑamb) and Uˆ ≤ Uˆ max.; for permissible resistance change ± (0.5 % R + 0.05 Ω) Continuous Pulse Axis Title 1K 10000 ▬▬▬ ▬▬▬ 2 Umax. - Pulse Voltage (V) ▬▬▬ TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 1st line 2nd line 1000 100 ˄ 100 10 10 μs 100 μs 1 ms 10 ms 100 ms 1s 10 10 s ti - Pulse Duration ˆ ≤ Pˆ max.; Maximum pulse voltage, single and continuous pulses; applicable if P for permissible resistance change ± (0.5 % R + 0.05 Ω) Pulse Voltage Revision: 26-Sep-2023 Document Number: 28758 7 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay Axis Title 10000 10K ▬▬▬ 1K 1000 100 100 1st line 2nd line 2nd line Test Voltage (V) ▬▬▬ TNPW0603 e3 TNPW0805 e3 10 100K 10 10 100 1K 10K R - Resistance Value (Ω) Pulse load rating in accordance with EN 60115-1 clause 4.27; 1.2 μs/50 μs; 5 pulses at 12 s intervals; for permissible resistance change ± (0.5 % R + 0.05 Ω) 1.2/50 Pulse Axis Title 10000 10K ▬▬▬ 1K 1000 100 100 1st line 2nd line 2nd line Test Voltage (V) ▬▬▬ TNPW0603 e3 TNPW0805 e3 10 10 100 1K 10K 10 100K R - Resistance Value (Ω) Pulse load rating in accordance with EN 60115-1 clause 4.27; 10 μs/700 μs; 10 pulses at 1 minute intervals; for permissible resistance change ± (0.5 % R + 0.05 Ω) 10/700 Pulse Axis Title 1 10000 ▬▬▬ ▬▬▬ ▬▬▬ ▬▬▬ TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 Multiple curves 1000 1st line 2nd line 2nd line Current Noise Voltage Ratio (μV/V) ▬▬▬ 0.1 100 10 0.01 100 1K 10K 100K 1M Resistance Value (Ω) In accordance with IEC 60195 Current Noise Voltage Ratio Revision: 26-Sep-2023 Document Number: 28758 8 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay Axis Title 10000 130 ▬▬▬ ▬▬▬ 120 ▬▬▬ ▬▬▬ 1000 1st line 2nd line 2nd line Non-Linearity A3 (dB) ▬▬▬ 110 TNPW0402 e3 TNPW0603 e3 TNPW0805 e3 TNPW1206 e3 Multiple curves 100 90 100 80 70 10 60 10 100 1K 10K 100K Resistance Value (Ω) In accordance with IEC 60195 Non-Linearity Axis Title Axis Title 5 10000 4 10000 TNPW0201 e3 TNPW0201 e3 25 Ω 50 Ω 100 Ω 3 1st line 2nd line 1000 -2 -4 100 -6 251000 Ω 1 50 Ω 0 -1 100 -2 100 Ω 549 Ω -3 549 Ω -8 2 -4 10 -10 1 10 100 10 -5 1 1000 10 f - Frequency (MHz) 100 1000 f - Frequency (MHz) HF Performance (1) HF Performance (1) Axis Title Axis Title 5 10000 4 10000 TNPW0402 e3 TNPW0402 e3 4 25 Ω 50 Ω 100 Ω -2 200 Ω -4 100 -6 1st line 2nd line 1000 2nd line Phase Angle (ϑ°) 0 25 Ω 3 2 1000 1 1st line 2nd line 2 2nd line (|Z| - R0)/R0 (%) 1st line 2nd line 0 2nd line Phase Angle (ϑ°) 2 2nd line (|Z| - R0)/R0 (%) 4 0 -1 100 -2 50 Ω -3 100 Ω -4 200 Ω 549 Ω 549 Ω -8 10 -10 1 10 100 10 -5 1 1000 f - Frequency (MHz) HF Performance (1) 10 100 1000 f - Frequency (MHz) HF Performance (1) Note (1) Typical figures, HF-characteristic also depends on termination and circuit design Revision: 26-Sep-2023 Document Number: 28758 9 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay Axis Title Axis Title 10000 15 1000 -20 549 Ω -40 100 1000 Ω 10 10 100 0 25 Ω 50 Ω 100 100 Ω -5 200 Ω / 549 Ω 10 -20 1000 1 10 f - Frequency (MHz) 100 1000 f - Frequency (MHz) HF Performance (1) HF Performance (1) Axis Title Axis Title 10000 20 10000 20 TNPW0805 e3 TNPW0805 e3 10 Ω 100 Ω 1000 Ω 10 Ω 0 1000 1st line 2nd line -20 -40 100 -60 2nd line Phase Angle (ϑ°) 0 2nd line (|Z| - R0)/R0 (%) 1000 Ω 4750 Ω 10 000 Ω 100 Ω 1000 -20 1st line 2nd line 1 5 -15 4750 Ω -80 1000 10 -10 -60 10 000 Ω 10 Ω 20 1st line 2nd line 2nd line (|Z| - R0)/R0 (%) 0 10000 TNPW0603 e3 10 Ω 25 Ω 50 Ω 100 Ω 200 Ω 1st line 2nd line TNPW0603 e3 25 2nd line Phase Angle (ϑ°) 20 1000 Ω -40 100 -60 10 000 Ω 10 000 Ω 10 -80 1 10 100 10 -80 1000 1 f - Frequency (MHz) HF Performance (1) 10 100 1000 f - Frequency (MHz) HF Performance (1) Note (1) Typical figures, HF-characteristic also depends on termination and circuit design Revision: 26-Sep-2023 Document Number: 28758 10 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay TEST AND REQUIREMENTS All tests are carried out in accordance with the following specifications: EN 60115-1, generic specification EN 60115-8, sectional specification EN 140401-801, detail specification IEC 60068-2-xx, test methods The parameters stated in the Test Procedures and Requirements table are based on the required tests and permitted limits of EN 140401-801. The detail specification EN 140401-801 does not cover case size 0201. The table presents only the most important tests, for the full test schedule refer to the documents listed above. However, some additional tests and a number of improvements against those minimum requirements have been included. The testing also covers most of the requirements specified by EIA / ECA-703 and JIS-C-5201-1. The tests are carried out under standard atmospheric conditions in accordance with IEC 60068-1, 4.3, whereupon the following values are applied: Temperature: 15 °C to 35 °C Relative humidity: 25 % to 75 % Air pressure: 86 kPa to 106 kPa (860 mbar to 1060 mbar) A climatic category LCT / UCT / 56 is applied, defined by the lower category temperature (LCT), the upper category temperature (UCT), and the duration of exposure in the damp heat, steady state test (56 days). The components are mounted for testing on printed circuit boards in accordance with EN 60115-8, 2.4.2, unless otherwise specified. TEST PROCEDURES AND REQUIREMENTS EN 60115-1 CLAUSE IEC 60068-2 (1) TEST METHOD TEST PROCEDURE REQUIREMENTS PERMISSIBLE CHANGE (ΔR) Stability for product types: TNPW0201 e3 22 Ω to 40 kΩ TNPW0402 e3 10 Ω to 100 kΩ TNPW0603 e3 1 Ω to 332 kΩ TNPW0805 e3 1 Ω to 1 MΩ TNPW1206 e3 1 Ω to 2 MΩ TNPW1210 e3 10 Ω to 3.01 MΩ 4.5 - Resistance - ± 1 %; ± 0.5 %; ± 0.1 % 4.8 - Temperature coefficient At (20 / -55 / 20) °C and (20 / 125 / 20) °C ± 50 ppm/K; ± 25 ppm/K; ± 15 ppm/K; ± 10 ppm/K Endurance at 70 °C: general operation mode 4.25.1 - Endurance at 70 °C: power operation mode Endurance at 70 °C: advanced mode 4.25.3 Revision: 26-Sep-2023 - Endurance at upper category temperature U = P 70 x R or U = Umax.; whichever is the less severe; 1.5 h on; 0.5 h off; 70 °C; 1000 h ± (0.05 % R + 0.01 Ω) 70 °C; 8000 h ± (0.1 % R + 0.02 Ω) 70 °C; 225 000 h ± (0.3 % R + 0.05 Ω) U = P 70 x R or U = Umax.; whichever is the less severe; 1.5 h on; 0.5 h off; 70 °C; 1000 h ± (0.1 % R + 0.01 Ω) 70 °C; 8000 h ± (0.2 % R + 0.02 Ω) 70 °C; 225 000 h ± (0.6 % R + 0.05 Ω) U = P 70 x R or U = Umax.; whichever is the less severe; 1.5 h on; 0.5 h off; 70 °C; 1000 h ± (0.2 % R + 0.05 Ω) 125 °C; 1000 h ± (0.05 % R + 0.01 Ω) 155 °C; 1000 h ± (0.1 % R + 0.02 Ω) 175 °C; 1000 h ± (0.25 % R + 0.05 Ω) Document Number: 28758 11 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay TEST PROCEDURES AND REQUIREMENTS EN 60115-1 CLAUSE IEC 60068-2 (1) TEST METHOD TEST PROCEDURE REQUIREMENTS PERMISSIBLE CHANGE (ΔR) Stability for product types: TNPW0201 e3 22 Ω to 40 kΩ TNPW0402 e3 10 Ω to 100 kΩ TNPW0603 e3 1 Ω to 332 kΩ TNPW0805 e3 1 Ω to 1 MΩ TNPW1206 e3 1 Ω to 2 MΩ TNPW1210 e3 10 Ω to 3.01 MΩ 78 (Cab) Damp heat, steady state (40 ± 2) °C; 56 days; (93 ± 3) % RH ± (0.1 % R + 0.01 Ω) 4.37 67 (Cy) Damp heat, steady state accelerated: general operation mode (85 ± 2) °C (85 ± 5) % RH U = 0.1 x P 70 x R ; U ≤ 0.3 x Umax.; 1000 h ± (0.1 % R + 0.01 Ω) - 1 (Ab) Cold -55 °C; 2 h ± (0.05 % R + 0.01 Ω) 4.19 14 (Na) Rapid change of temperature 30 min at LCT and 30 min at UCT; LCT = -55 °C; UCT = 155 °C; 1000 cycles ± (0.1 % R + 0.01 Ω) Short time overload: general operation mode U = 2.5 x P 70 x R or U = 2 x Umax.; whichever is the less severe; 5s ± (0.05 % R + 0.01 Ω) Short time overload: power operation mode U = 2.5 x P 70 x R or U = 2 x Umax.; whichever is the less severe; 5s ± (0.1 % R + 0.01 Ω) Single pulse high voltage overload: general operation mode Severity no. 4: U = 10 x P 70 x R or U = 2 x Umax.; whichever is the less severe; 10 pulses 10 μs/700 μs ± (0.5 % R + 0.02 Ω) no visible damage Single pulse high voltage overload: power operation mode Severity no. 4: U = 10 x P 70 x R or U = 2 x Umax.; whichever is the less severe; 10 pulses 10 μs/700 μs ± (1 % R + 0.02 Ω) no visible damage Periodic electric overload: general operation mode U = 15 x P 70 x R or U = 2 x Umax.; 0.1 s on; 2.5 s off; whichever is the less severe; 1000 cycles ± (0.5 % R + 0.05 Ω) no visible damage Periodic electric overload: power operation mode U = 15 x P 70 x R or U = 2 x Umax.; 0.1 s on; 2.5 s off; whichever is the less severe; 1000 cycles ± (1 % R + 0.05 Ω) no visible damage (2) 4.24 4.13 4.27 4.39 (2) Revision: 26-Sep-2023 - - - Document Number: 28758 12 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay TEST PROCEDURES AND REQUIREMENTS EN 60115-1 CLAUSE IEC 60068-2 (1) TEST METHOD TEST PROCEDURE REQUIREMENTS PERMISSIBLE CHANGE (ΔR) Stability for product types: 4.38 4.22 - 6 (Fc) TNPW0201 e3 22 Ω to 40 kΩ TNPW0402 e3 10 Ω to 100 kΩ TNPW0603 e3 1 Ω to 332 kΩ TNPW0805 e3 1 Ω to 1 MΩ TNPW1206 e3 1 Ω to 2 MΩ TNPW1210 e3 10 Ω to 3.01 MΩ Electro static discharge (human body model) IEC 61340-3-1 (1); 3 pos. + 3 neg. (equivalent to MIL-STD-883, method 3015) TNPW0201 e3: 200 V TNPW0402 e3: 400 V TNPW0603 e3: 1000 V TNPW0805 e3: 1500 V TNPW1206 e3: 2000 V ± (0.5 % R + 0.05 Ω) Vibration Endurance by sweeping; 10 Hz to 2000 Hz; no resonance; amplitude ≤ 1.5 mm or ≤ 200 m/s2; 7.5 h ± (0.05 % R + 0.01 Ω) no visible damage Solder bath method; SnPb40; non-activated flux (215 ± 3) °C; (3 ± 0.3) s Good tinning (≥ 95 % covered); no visible damage 4.17 58 (Td) Solderability 4.18 58 (Td) Resistance to soldering heat Solder bath method; (260 ± 5) °C; (10 ± 1) s (3) ± (0.02 % R + 0.01 Ω) 4.29 45 (XA) Component solvent resistance Isopropyl alcohol + 50 °C; method 2 No visible damage Solder bath method; SnAg3Cu0.5 or SnAg3.5; non-activated flux (235 ± 3) °C; (2 ± 0.2) s TNPW0201 e3: 2 N 4.32 21 (Ue3) Shear (adhesion) TNPW0402 e3 and TNPW0603 e3: 9 N No visible damage TNPW0805 e3, TNPW1206 e3, and TNPW1210 e3: 45 N 4.33 21 (Ue1) Substrate bending Depth 2 mm, 3 times ± (0.05 % R + 0.01 Ω) no visible damage, no open circuit in bent position 4.7 - Voltage proof URMS = Uins; 60 ± 5 s No flashover or breakdown 4.35 - Flammability (1), IEC 60695-11-5 needle flame test; 10 s No burning after 30 s Notes (1) The quoted IEC standards are also released as EN standards with the same number and identical contents (2) Periodic electric overload test for power operation mode not applicable for case size 0201 (3) For TNPW0201 e3 only similar to DIN EN 60115-8 test procedure. Due to the components small size they were fixed by glue previous to testing instead of applying tweezers Revision: 26-Sep-2023 Document Number: 28758 13 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TNPW e3 www.vishay.com Vishay DIMENSIONS L Tt W H Tb DIMENSIONS AND MASS L (mm) W (mm) H (mm) Tt / Tb (mm) MASS (mg) TNPW0201 e3 0.6 ± 0.05 0.3 ± 0.05 0.23 ± 0.03 0.12 ± 0.05 0.14 TNPW0402 e3 1.0 ± 0.05 0.5 ± 0.05 0.35 ± 0.05 0.2 ± 0.10 0.65 TNPW0603 e3 1.55 ± 0.05 0.85 ± 0.10 0.45 ± 0.10 0.3 ± 0.20 2 TNPW0805 e3 2.0 ± 0.1 1.25 ± 0.15 0.45 ± 0.10 0.4 ± 0.20 5.5 TNPW1206 e3 3.2 + 0.1 / - 0.2 1.6 ± 0.15 0.55 ± 0.10 0.5 ± 0.25 10 TNPW1210 e3 3.2 + 0.1 / - 0.2 2.45 ± 0.15 0.60 ± 0.15 0.5 ± 0.25 16 TYPE / SIZE SOLDERING RECOMMENDATIONS For recommended solder pad dimensions please refer to www.vishay.com/doc?28950. For recommended soldering profiles please refer to www.vishay.com/doc?31090. Revision: 26-Sep-2023 Document Number: 28758 14 For technical questions, contact: thinfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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