TP0610K
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
VGS(th) (V)
ID (mA)
- 60
6 at VGS = - 10 V
- 1 to - 3
- 185
TO-236
(SOT-23)
G
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
1
3
S
D
2
Top View
Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• High-Side Switching
• Low On-Resistance: 6
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TA = 25 °C
TA = 100 °C
Pulsed Drain Currentb
Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
ID
IDM
TA = 25 °C
TA = 100 °C
PD
Unit
V
- 185
- 115
mA
- 800
350
140
mW
RthJA
350
°C/W
TJ, Tstg
- 55 to 150
°C
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
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1
TP0610K
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 10 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
IGSS
IDSS
ID(on)
RDS(on)
-3
VDS = 0 V, VGS = ± 20 V
± 10
VDS = 0 V, VGS = ± 10 V
± 200
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 500
VDS = 0 V, VGS = ± 5 V
± 100
VDS = - 60 V, VGS = 0 V
- 25
VDS = - 60 V, VGS = 0 V, TJ = 85 °C
- 50
VGS = - 10 V, VDS = - 10 V
- 600
VGS = - 4.5 V, ID = - 25 mA
10
6
Diode Forward Voltage
VDS = - 10 V, ID = - 100 mA
VSD
IS = - 200 mA, VGS = 0 V
nA
mA
VGS = - 10 V, ID = - 500 mA
gfs
µA
- 250
VGS = - 10 V, VDS = - 4.5 V
VGS = - 10 V, ID = - 500 mA, TJ =125 °C
Forward Transconductancea
V
9
80
mS
- 1.4
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1.7
VDS = - 30 V, VGS = - 15 V
ID - 500 mA
0.26
VDS = - 25 V, VGS = 0 V
f = 1 MHz
10
nC
0.46
23
pF
5
Switchingb
Turn-On Time
td(on)
Turn-Off Time
td(off)
VDD = - 25 V, RL = 150
ID - 200 mA, VGEN = - 10 V, Rg = 10
20
35
ns
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
1200
VGS = 10 V
TJ = - 55 °C
7V
0.8
I D - Drain Current (mA)
ID - Drain Current (A)
8V
0.6
6V
0.4
5V
900
25 °C
125 °C
600
300
0.2
4V
0.0
0
0
1
2
3
4
5
0
2
VDS - Drain-to-Source Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
40
20
VGS = 0 V
VGS = 4.5 V
32
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
16
12
VGS = 5 V
8
VGS = 10 V
4
Ciss
24
16
Coss
8
Crss
0
0
0
200
400
600
800
0
1000
5
ID - Drain Current (mA)
10
25
Capacitance
15
1.8
ID = 500 mA
1.5
12
VDS = 30 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
20
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VDS = 48 V
9
6
3
0
0.0
15
VGS = 10 V at 500 mA
1.2
VGS = 4.5 V at 25 mA
0.9
0.6
0.3
0.3
0.6
0.9
1.2
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
1.5
1.8
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1000
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
VGS = 0 V
100
TJ = 125 °C
10
TJ = 25 °C
8
ID = 500 mA
6
4
ID = 200 mA
2
TJ = - 55 °C
0
1
0.00
0.3
0.6
0.9
1.2
V SD - Source-to-Drain Voltage (V)
0
1.5
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.5
3
0.4
2.5
ID = 250 µA
0.3
2
0.2
Power (W)
VGS(th) Variance (V)
2
0.1
1.5
- 0.0
1
TA = 25 °C
- 0.1
0.5
- 0.2
- 0.3
- 50
0
- 25
0
25
50
75
100
125
150
0.1
0.01
100
10
1
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
600
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 350 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71411.
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Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Vishay
Disclaimer
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
