TPC6.8A thru TPC51A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
Uni-directional 1500 W TVS in SMPC (TO-277) Package
FEATURES
®
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
eSMP Series
Available
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
A
• Very low profile - typical height of 1.1 mm
1
• Ideal for automated placement
• Uni-direction only
2
SMPC (TO-277A)
• Excellent clamping capability
A
Cathode 1
• Very fast response time
Anode
Cathode 2
• Meets MSL level 1, per J-STD-020
• Low incremental surge resistance
• AEC-Q101 qualified
DESIGN SUPPORT TOOLS
click logo to get started
Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Available
PRIMARY CHARACTERISTICS
VWM
5.8 V to 43.6 V
VBR
6.8 V to 51 V
PPPM
1500 W
TJ max.
185 °C
Polarity
Uni-directional
Package
SMPC (TO-277A)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
PPPM
1500
W
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave (2)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A (3)
Operating junction and storage temperature range
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 07-Dec-2018
Document Number: 89056
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT (V)
MIN.
NOM.
TEST
STAND-OFF
CURRENT VOLTAGE
IT
VWM
(mA)
(V)
MAX.
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID (μA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
TYPICAL
TEMP.
COEFFICIENT
OF VBR (3)
T
(%/°C)
TPC6.8A
DEP
6.45
6.80
7.14
10
5.80
1500
10 000
143
10.5
0.047
TPC7.5A
DGP
7.13
7.50
7.88
10
6.40
500
5000
133
11.3
0.052
TPC8.2A
DKP
7.79
8.20
8.61
10
7.02
200
2000
124
12.1
0.056
TPC9.1A
DMP
8.65
9.10
9.55
1.0
7.78
50
500
112
13.4
0.060
TPC10A
DPP
9.5
10.0
10.5
1.0
8.55
20
200
103
14.5
0.064
TPC11A
DRP
10.5
11.0
11.6
1.0
9.40
5.0
50
96.2
15.6
0.067
TPC12A
DTP
11.4
12.0
12.6
1.0
10.2
2.0
10
89.8
16.7
0.070
TPC13A
DVP
12.4
13.0
13.7
1.0
11.1
2.0
10
82.4
18.2
0.072
TPC15A
DXP
14.3
15.0
15.8
1.0
12.8
1.0
10
70.8
21.2
0.076
TPC16A
DZP
15.2
16.0
16.8
1.0
13.6
1.0
10
66.7
22.5
0.078
TPC18A
EEP
17.1
18.0
18.9
1.0
15.3
1.0
10
59.5
25.2
0.080
TPC20A
EGP
19.0
20.0
21.0
1.0
17.1
1.0
10
54.2
27.7
0.082
TPC22A
EKP
20.9
22.0
23.1
1.0
18.8
1.0
10
49.0
30.6
0.084
TPC24A
EMP
22.8
24.0
25.2
1.0
20.5
1.0
10
45.2
33.2
0.085
TPC27A
EPP
25.7
27.0
28.4
1.0
23.1
1.0
10
40.0
37.5
0.087
TPC30A
ERP
28.5
30.0
31.5
1.0
25.6
1.0
10
36.2
41.4
0.088
TPC33A
ETP
31.4
33.0
34.7
1.0
28.2
1.0
10
32.8
45.7
0.089
TPC36A
EVP
34.2
36.0
37.8
1.0
30.8
1.0
15
30.1
49.9
0.090
TPC39A
EXP
37.1
39.0
41.0
1.0
33.3
1.0
15
27.8
53.9
0.091
TPC43A
EZP
40.9
43.0
45.2
1.0
36.8
1.0
20
25.3
59.3
0.092
TPC47A
FEP
44.7
47.0
49.4
1.0
40.2
1.0
20
23.1
64.8
0.092
TPC51A
FGP
48.5
51.0
53.6
1.0
43.6
1.0
20
21.4
70.1
0.093
Notes
(1) V
BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TPC10AHM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
TPC10AHM3_A/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
(1) Automotive grade
Revision: 07-Dec-2018
Document Number: 89056
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)
PPPM - Peak Power (kW)
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
10
1
Junction Capacitance (pF)
10 000
100
VR, measured at
Zero Bias
VR measured at
Stand-Off Voltage, VWM
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
1
10 ms
10
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
100
VBR - Breakdown Voltage (V)
td - Pulse Width (s)
75
50
25
0
50
0
100
150
200
10
1
RthJA, by mounted
on recommended
PCB 2 oz. area
0.1
0.01
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
Tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
IPPM - Peak Pulse Current, % IRSM
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 07-Dec-2018
Document Number: 89056
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPC6.8A thru TPC51A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
A
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 07-Dec-2018
Document Number: 89056
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2021
1
Document Number: 91000
