TPSMA30HE3_A/I

TPSMA6.8A thru TPSMA43A www.vishay.com Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology Available • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % SMA (DO-214AC) Cathode Anode Available • Excellent clamping capability • Very fast response time LINKS TO ADDITIONAL RESOURCES • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 3D 3D 3D Models • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 5.8 V to 36.8 V VBR 6.8 V to 43 V PPPM 400 W PD 1.0 W IFSM 40 A TJ max. 185 °C Polarity Unidirectional Package SMA (DO-214AC) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightning on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3) PPPM 400 W Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1) IPPM See next table A PD 1.0 W A Power dissipation at TA = 25 °C (4) Peak forward surge current 8.3 ms single half sine-wave (3) IFSM 40 Maximum instantaneous forward voltage at 25 A (3) VF 3.5 V Operating junction and storage temperature range TJ, TSTG -65 to +185 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal (3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum (4) Mounted on minimum recommended pad layout Revision: 19-Apr-2021 Document Number: 88405 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMA6.8A thru TPSMA43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. NOM. MAX. STANDTEST OFF CURRENT VOLTAGE IT VWM (mA) (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM TYPICAL PEAK MAXIMUM TEMP. PULSE CLAMPING COEFFICIENT SURGE VOLTAGE OF VBR (3) CURRENT AT IPPM αT (2) IPPM VC (V) (%/°C) (A) TPSMA6.8A AEP 6.45 6.80 7.14 10 5.80 300 1000 38.1 10.5 0.047 TPSMA7.5A AGP 7.13 7.50 7.88 10 6.40 150 500 35.4 11.3 0.052 TPSMA8.2A AKP 7.79 8.20 8.61 10 7.02 50 200 33.1 12.1 0.056 TPSMA9.1A AMP 8.65 9.10 9.55 1.0 7.78 10 50 29.9 13.0 0.060 TPSMA10A APP 9.50 10.0 10.50 1.0 8.65 5.0 20 27.6 14.5 0.064 TPSMA11A ARP 10.50 11.0 11.60 1.0 9.40 1.0 5.0 25.6 15.6 0.067 TPSMA12A ATP 11.40 12.0 12.60 1.0 10.20 1.0 5.0 24.0 16.7 0.070 TPSMA13A AVP 12.40 13.0 13.70 1.0 11.10 1.0 5.0 22.0 18.2 0.072 TPSMA15A AXP 14.30 15.0 15.80 1.0 12.80 1.0 5.0 18.9 21.2 0.076 TPSMA16A AZP 15.20 16.0 16.80 1.0 13.60 1.0 5.0 17.8 22.0 0.078 TPSMA18A BEP 17.10 18.0 18.90 1.0 15.30 1.0 5.0 15.9 25.5 0.080 TPSMA20A BGP 19.00 20.0 21.00 1.0 17.10 1.0 5.0 14.4 27.7 0.082 TPSMA22A BKP 20.90 22.0 23.10 1.0 18.80 1.0 5.0 13.1 30.6 0.084 TPSMA24A BMP 22.80 24.0 25.20 1.0 20.50 1.0 5.0 12.0 33.2 0.085 TPSMA27A BPP 25.70 27.0 28.40 1.0 23.10 1.0 5.0 10.7 37.5 0.087 TPSMA30A BRP 28.50 30.0 31.50 1.0 25.60 1.0 5.0 9.7 41.4 0.088 TPSMA33A BTP 31.40 33.0 34.70 1.0 28.20 1.0 5.0 8.8 45.7 0.089 TPSMA36A BVP 34.20 36.0 37.80 1.0 30.80 1.0 5.0 8.0 49.9 0.090 TPSMA39A BXP 37.10 39.0 41.00 1.0 33.30 1.0 5.0 7.4 53.9 0.091 TPSMA43A BZP 40.90 43.0 45.20 1.0 36.80 1.0 5.0 6.7 59.3 0.092 Notes (1) V BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TPSMA6.8AHE3_B/H (1) 0.064 H 1800 7" diameter plastic tape and reel TPSMA6.8AHE3_B/I (1) 0.064 I 7500 13" diameter plastic tape and reel TPSMA6.8AHM3_B/H (1) 0.064 H 1800 7" diameter plastic tape and reel TPSMA6.8AHM3_B/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 19-Apr-2021 Document Number: 88405 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMA6.8A thru TPSMA43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C Junction Capacitance (pF) PPPM - Peak Power (kW) 100 10 1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 1000 VR measured at Stand-Off, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 1 10 100 td - Pulse Width (s) VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 100 200 Peak Forward Surge Current (A) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 µs VR measured at Zero Bias 75 50 25 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 0 50 100 150 200 1 5 10 50 100 TJ - Initial Temperature (°C) Number of Cycles at 60 Hz Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current IPPM - Peak Pulse Current, % IRSM 150 td TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 19-Apr-2021 Document Number: 88405 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMA6.8A thru TPSMA43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 19-Apr-2021 Document Number: 88405 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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