TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Surface-Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
Available
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in unidirectional polarity only
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
SMB (DO-214AA)
Cathode
Available
• Excellent clamping capability
Anode
• Very fast response time
LINKS TO ADDITIONAL RESOURCES
• Low incremental surge resistance
3D 3D
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
PRIMARY CHARACTERISTICS
VBR
6.8 V to 43 V
VWM
5.8 V to 36.8 V
PPPM
600 W
IFSM
75 A
TJ max.
185 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Polarity
Unidirectional
Package
SMB (DO-214AA)
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform (fig. 3) (1)
Peak forward surge current 8.3 ms single half sine-wave
Maximum instantaneous forward voltage at 50 A (2)(3)
Operating junction and storage temperature range
(2)(3)
(1)(2)
VALUE
UNIT
PPPM
600
W
IPPM
See table next page
A
IFSM
75
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 19-Apr-2021
Document Number: 88406
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
MAX.
MAXIMUM
STAND-OFF REVERSE
TEST
CURRENT VOLTAGE LEAKAGE
VWM
AT VWM
IT
(mA)
(V)
IR
(μA)
MAXIMUM
MAXIMUM MAXIMUM
REVERSE
PEAK PULSE CLAMPING
LEAKAGE
VOLTAGE
SURGE
AT VWM
AT IPPM
CURRENT
TJ = 150 °C
(2)
VC
IPPM
ID
(A)
(V)
(μA)
TYPICAL
TEMP.
COEFFICIENT
OF VBR (3)
αT
(%/°C)
MIN.
NOM.
TPSMB6.8A
KEP
6.45
6.80
7.14
10
5.8
500
1000
57.1
10.5
0.047
TPSMB7.5A
KGP
7.13
7.50
7.88
10
6.4
250
500
53.1
11.3
0.052
TPSMB8.2A
KKP
7.79
8.20
8.61
10
7.02
100
200
49.6
12.1
0.056
TPSMB9.1A
KMP
8.65
9.10
9.55
1
7.78
25
50
44.8
13.4
0.060
TPSMB10A
KPP
9.5
10.0
10.5
1
8.55
5
20
41.4
14.5
0.064
TPSMB11A
KRP
10.5
11.0
11.6
1
9.4
2
5
38.5
15.6
0.067
TPSMB12A
KTP
11.4
12.0
12.6
1
10.2
2
5
35.9
16.7
0.070
TPSMB13A
KVP
12.4
13.0
13.7
1
11.1
2
5
33
18.2
0.072
TPSMB15A
KXP
14.3
15.0
15.8
1
12.8
1
5
28.3
21.2
0.076
TPSMB16A
KZP
15.2
16.0
16.8
1
13.6
1
5
26.7
22.5
0.078
TPSMB18A
LEP
17.1
18.0
18.9
1
15.3
1
5
23.8
25.2
0.080
TPSMB20A
LGP
19
20.0
21
1
17.1
1
5
21.7
27.7
0.082
TPSMB22A
LKP
20.9
22.0
23.1
1
18.8
1
5
19.6
30.6
0.084
TPSMB24A
LMP
22.8
24.0
25.2
1
20.5
1
5
18.1
33.2
0.085
TPSMB27A
LPP
25.7
27.0
28.4
1
23.1
1
5
16
37.5
0.087
TPSMB30A
LRP
28.5
30.0
31.5
1
25.6
1
5
14.5
41.4
0.088
TPSMB33A
LTP
31.4
33.0
34.7
1
28.2
1
5
13.1
45.7
0.089
TPSMB36A
LVP
34.2
36.0
37.8
1
30.8
1
5
12
49.9
0.090
TPSMB39A
LXP
37.1
39.0
41.0
1
33.3
1
5
11.1
53.9
0.091
TPSMB43A
LZP
40.9
43.0
45.2
1
36.8
1
5
10.1
59.3
0.092
Notes
(1) V
BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TPSMB6.8AHE3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
TPSMB6.8AHE3_A/I (1)
0.096
I
3200
13" diameter plastic tape and reel
TPSMB6.8AHM3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
0.096
I
3200
13" diameter plastic tape and reel
TPSMB6.8AHM3_A/I
(1)
Note
(1) AEC-Q101 qualified
Revision: 19-Apr-2021
Document Number: 88406
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1.0
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
VR measured
at Zero Bias
1000
VR measured at
Stand-Off Voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
100
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
0
10
0
50
100
150
200
1
10
100
TJ - Initial Temperature (°C)
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current
IPPM - Peak Pulse Current, % IRSM
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 19-Apr-2021
Document Number: 88406
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 19-Apr-2021
Document Number: 88406
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000