TPSMB7.5AHE3_A/I

TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology Available • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % SMB (DO-214AA) Cathode Available • Excellent clamping capability Anode • Very fast response time LINKS TO ADDITIONAL RESOURCES • Low incremental surge resistance 3D 3D • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 3D Models • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 PRIMARY CHARACTERISTICS VBR 6.8 V to 43 V VWM 5.8 V to 36.8 V PPPM 600 W IFSM 75 A TJ max. 185 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Polarity Unidirectional Package SMB (DO-214AA) Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) Peak pulse current with a 10/1000 μs waveform (fig. 3) (1) Peak forward surge current 8.3 ms single half sine-wave Maximum instantaneous forward voltage at 50 A (2)(3) Operating junction and storage temperature range (2)(3) (1)(2) VALUE UNIT PPPM 600 W IPPM See table next page A IFSM 75 A VF 3.5 V TJ, TSTG -65 to +185 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 19-Apr-2021 Document Number: 88406 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MAX. MAXIMUM STAND-OFF REVERSE TEST CURRENT VOLTAGE LEAKAGE VWM AT VWM IT (mA) (V) IR (μA) MAXIMUM MAXIMUM MAXIMUM REVERSE PEAK PULSE CLAMPING LEAKAGE VOLTAGE SURGE AT VWM AT IPPM CURRENT TJ = 150 °C (2) VC IPPM ID (A) (V) (μA) TYPICAL TEMP. COEFFICIENT OF VBR (3) αT (%/°C) MIN. NOM. TPSMB6.8A KEP 6.45 6.80 7.14 10 5.8 500 1000 57.1 10.5 0.047 TPSMB7.5A KGP 7.13 7.50 7.88 10 6.4 250 500 53.1 11.3 0.052 TPSMB8.2A KKP 7.79 8.20 8.61 10 7.02 100 200 49.6 12.1 0.056 TPSMB9.1A KMP 8.65 9.10 9.55 1 7.78 25 50 44.8 13.4 0.060 TPSMB10A KPP 9.5 10.0 10.5 1 8.55 5 20 41.4 14.5 0.064 TPSMB11A KRP 10.5 11.0 11.6 1 9.4 2 5 38.5 15.6 0.067 TPSMB12A KTP 11.4 12.0 12.6 1 10.2 2 5 35.9 16.7 0.070 TPSMB13A KVP 12.4 13.0 13.7 1 11.1 2 5 33 18.2 0.072 TPSMB15A KXP 14.3 15.0 15.8 1 12.8 1 5 28.3 21.2 0.076 TPSMB16A KZP 15.2 16.0 16.8 1 13.6 1 5 26.7 22.5 0.078 TPSMB18A LEP 17.1 18.0 18.9 1 15.3 1 5 23.8 25.2 0.080 TPSMB20A LGP 19 20.0 21 1 17.1 1 5 21.7 27.7 0.082 TPSMB22A LKP 20.9 22.0 23.1 1 18.8 1 5 19.6 30.6 0.084 TPSMB24A LMP 22.8 24.0 25.2 1 20.5 1 5 18.1 33.2 0.085 TPSMB27A LPP 25.7 27.0 28.4 1 23.1 1 5 16 37.5 0.087 TPSMB30A LRP 28.5 30.0 31.5 1 25.6 1 5 14.5 41.4 0.088 TPSMB33A LTP 31.4 33.0 34.7 1 28.2 1 5 13.1 45.7 0.089 TPSMB36A LVP 34.2 36.0 37.8 1 30.8 1 5 12 49.9 0.090 TPSMB39A LXP 37.1 39.0 41.0 1 33.3 1 5 11.1 53.9 0.091 TPSMB43A LZP 40.9 43.0 45.2 1 36.8 1 5 10.1 59.3 0.092 Notes (1) V BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TPSMB6.8AHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel TPSMB6.8AHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel TPSMB6.8AHM3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel 0.096 I 3200 13" diameter plastic tape and reel TPSMB6.8AHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 19-Apr-2021 Document Number: 88406 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs VR measured at Zero Bias 1000 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 1 10 td - Pulse Width (s) VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 100 100 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 0 10 0 50 100 150 200 1 10 100 TJ - Initial Temperature (°C) Number of Cycles at 60 Hz Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current IPPM - Peak Pulse Current, % IRSM 150 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 19-Apr-2021 Document Number: 88406 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8A thru TPSMB43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 19-Apr-2021 Document Number: 88406 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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