TPSMC18AHE3_A/H

TPSMC6.8A thru TPSMC47A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology Available • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • 1500 W peak pulse power capability with a 10/1000 μs waveform SMC (DO-214AB) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D Available • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 3D Models • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VBR 6.8 V to 47 V VWM 5.8 V to 40.2 V PPPM 1500 W IFSM 200 A TJ max. 185 °C Polarity Unidirectional Package SMC (DO-214AB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2) PPPM 1500 W Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1) IPPM See table next page A Peak forward surge current 8.3 ms single half sine-wave (2)(3) IFSM 200 A Maximum instantaneous forward voltage at 100 A (2)(3) Operating junction and storage temperature range VF 3.5 V TJ, TSTG -65 to +185 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 19-Apr-2021 Document Number: 88407 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMC6.8A thru TPSMC47A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) DEVICE DEVICE TYPE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. NOM. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 150 °C ID (μA) MAX. MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) TYPICAL MAXIMUM TEMP. CLAMPING VOLTAGE COEFFICIENT AT IPPM OF VBR (3) VC αT (V) (%/°C) TPSMC6.8A DEP 6.45 6.80 7.14 10 5.80 1000 10 000 143 10.5 0.047 TPSMC7.5A DGP 7.13 7.50 7.88 10 6.40 500 5000 133 11.3 0.052 TPSMC8.2A DKP 7.79 8.20 8.61 10 7.02 200 2000 124 12.1 0.056 TPSMC9.1A DMP 8.65 9.10 9.55 1 7.78 50 500 112 13.4 0.060 TPSMC10A DPP 9.5 10.0 10.5 1 8.55 20 200 103 14.5 0.064 TPSMC11A DRP 10.5 11.0 11.6 1 9.40 5.0 50 96.2 15.6 0.067 TPSMC12A DTP 11.4 12.0 12.6 1 10.2 2.0 10 89.8 16.7 0.070 TPSMC13A DVP 12.4 13.0 13.7 1 11.1 2.0 10 82.4 18.2 0.072 TPSMC15A DXP 14.3 15.0 15.8 1 12.8 1.0 10 70.8 21.2 0.076 TPSMC16A DZP 15.2 16.0 16.8 1 13.6 1.0 10 66.7 22.5 0.078 TPSMC18A EEP 17.1 18.0 18.9 1 15.3 1.0 10 59.5 25.2 0.080 TPSMC20A EGP 19.0 20.0 21.0 1 17.1 1.0 10 54.2 27.7 0.082 TPSMC22A EKP 20.9 22.0 23.1 1 18.8 1.0 10 49.0 30.6 0.084 TPSMC24A EMP 22.8 24.0 25.2 1 20.5 1.0 10 45.2 33.2 0.085 TPSMC27A EPP 25.7 27.0 28.4 1 23.1 1.0 10 40.0 37.5 0.087 TPSMC30A ERP 28.5 30.0 31.5 1 25.6 1.0 10 36.2 41.4 0.088 TPSMC33A ETP 31.4 33.0 34.7 1 28.2 1.0 10 32.8 45.7 0.089 TPSMC36A EVP 34.2 36.0 37.8 1 30.8 1.0 15 30.1 49.9 0.090 TPSMC39A EXP 37.1 39.0 41.0 1 33.3 1.0 15 27.8 53.9 0.091 TPSMC43A EZP 40.9 43.0 45.2 1 36.8 1.0 20 25.3 59.3 0.092 TPSMC47A FEP 44.7 47.0 49.4 1 40.2 1.0 20 23.1 64.8 0.092 Notes (1) V BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY TPSMC6.8AHE3_B/H (1) 0.211 TPSMC6.8AHE3_B/I (1) TPSMC6.8AHM3_B/H (1) TPSMC6.8AHM3_B/I (1) DELIVERY MODE H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Apr-2021 Document Number: 88407 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMC6.8A thru TPSMC47A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 TA = 25 °C Non-Repetitive Pulse Waveform shown in Fig. 3 10 1.0 0.31 x 0.31" (8.0 x 8.0 mm) Copper Pad Areas 1000 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 1 10 ms 10 100 td - Pulse Width (s) VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 Peak Forward Surge Current (A) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % VR, measured at Zero Bias Junction Capacitance (pF) PPPM - Peak Power (kW) 100 75 50 25 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 50 0 100 150 200 1 5 10 50 100 TJ - Initial Temperature (°C) Number of Cycles at 60 Hz Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current IPPM - Peak Pulse Current, % IRSM 150 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 19-Apr-2021 Document Number: 88407 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMC6.8A thru TPSMC47A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 19-Apr-2021 Document Number: 88407 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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