TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
Available
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in unidirectional polarity only
• 1500 W peak pulse power capability with a
10/1000 μs waveform
SMC (DO-214AB)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VBR
6.8 V to 47 V
VWM
5.8 V to 40.2 V
PPPM
1500 W
IFSM
200 A
TJ max.
185 °C
Polarity
Unidirectional
Package
SMC (DO-214AB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
PPPM
1500
W
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
IPPM
See table next page
A
Peak forward surge current 8.3 ms single half sine-wave (2)(3)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A (2)(3)
Operating junction and storage temperature range
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal
(3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 19-Apr-2021
Document Number: 88407
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
DEVICE TYPE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
MIN.
NOM.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID
(μA)
MAX.
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2)
(A)
TYPICAL
MAXIMUM
TEMP.
CLAMPING
VOLTAGE COEFFICIENT
AT IPPM
OF VBR (3)
VC
αT
(V)
(%/°C)
TPSMC6.8A
DEP
6.45
6.80
7.14
10
5.80
1000
10 000
143
10.5
0.047
TPSMC7.5A
DGP
7.13
7.50
7.88
10
6.40
500
5000
133
11.3
0.052
TPSMC8.2A
DKP
7.79
8.20
8.61
10
7.02
200
2000
124
12.1
0.056
TPSMC9.1A
DMP
8.65
9.10
9.55
1
7.78
50
500
112
13.4
0.060
TPSMC10A
DPP
9.5
10.0
10.5
1
8.55
20
200
103
14.5
0.064
TPSMC11A
DRP
10.5
11.0
11.6
1
9.40
5.0
50
96.2
15.6
0.067
TPSMC12A
DTP
11.4
12.0
12.6
1
10.2
2.0
10
89.8
16.7
0.070
TPSMC13A
DVP
12.4
13.0
13.7
1
11.1
2.0
10
82.4
18.2
0.072
TPSMC15A
DXP
14.3
15.0
15.8
1
12.8
1.0
10
70.8
21.2
0.076
TPSMC16A
DZP
15.2
16.0
16.8
1
13.6
1.0
10
66.7
22.5
0.078
TPSMC18A
EEP
17.1
18.0
18.9
1
15.3
1.0
10
59.5
25.2
0.080
TPSMC20A
EGP
19.0
20.0
21.0
1
17.1
1.0
10
54.2
27.7
0.082
TPSMC22A
EKP
20.9
22.0
23.1
1
18.8
1.0
10
49.0
30.6
0.084
TPSMC24A
EMP
22.8
24.0
25.2
1
20.5
1.0
10
45.2
33.2
0.085
TPSMC27A
EPP
25.7
27.0
28.4
1
23.1
1.0
10
40.0
37.5
0.087
TPSMC30A
ERP
28.5
30.0
31.5
1
25.6
1.0
10
36.2
41.4
0.088
TPSMC33A
ETP
31.4
33.0
34.7
1
28.2
1.0
10
32.8
45.7
0.089
TPSMC36A
EVP
34.2
36.0
37.8
1
30.8
1.0
15
30.1
49.9
0.090
TPSMC39A
EXP
37.1
39.0
41.0
1
33.3
1.0
15
27.8
53.9
0.091
TPSMC43A
EZP
40.9
43.0
45.2
1
36.8
1.0
20
25.3
59.3
0.092
TPSMC47A
FEP
44.7
47.0
49.4
1
40.2
1.0
20
23.1
64.8
0.092
Notes
(1) V
BR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
TPSMC6.8AHE3_B/H (1)
0.211
TPSMC6.8AHE3_B/I (1)
TPSMC6.8AHM3_B/H (1)
TPSMC6.8AHM3_B/I (1)
DELIVERY MODE
H
850
7" diameter plastic tape and reel
0.211
I
3500
13" diameter plastic tape and reel
0.211
H
850
7" diameter plastic tape and reel
0.211
I
3500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 19-Apr-2021
Document Number: 88407
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
10
1.0
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
1000
VR measured at
Stand-Off Voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
1
10 ms
10
100
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
200
100
Peak Forward Surge Current (A)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
VR, measured at
Zero Bias
Junction Capacitance (pF)
PPPM - Peak Power (kW)
100
75
50
25
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
0
50
0
100
150
200
1
5
10
50
100
TJ - Initial Temperature (°C)
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current
IPPM - Peak Pulse Current, % IRSM
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 19-Apr-2021
Document Number: 88407
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TPSMC6.8A thru TPSMC47A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 19-Apr-2021
Document Number: 88407
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000