TSAL4400
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
94 8636
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
DESCRIPTION
TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs,
MQW technology with high radiant power molded in a
blue-gray plastic package.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
36
± 25
940
15
TSAL4400
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TSAL4400
TSAL4400-RSZ
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Ammopack
MOQ: 8000 pcs, 2000 pcs/box
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1.5
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
300
K/W
Soldering temperature
Thermal resistance junction / ambient
Rev. 1.9, 03-Nov-16
Document Number: 81006
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL4400
www.vishay.com
Vishay Semiconductors
120
160
140
120
100
80
100
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
RthJA = 300 K/W
60
40
80
RthJA = 300 K/W
60
40
20
20
0
0
0
10
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
21317
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21318
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
-
1.35
1.6
V
IF = 1 A, tp = 100 μs
VF
-
2.6
3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
-
-1.8
-
mV/K
Reverse current
VR = 5 V
IR
-
-
10
μA
VR = 0 V, f = 1 MHz, E = 0
Cj
-
60
-
pF
IF = 100 mA, tp = 20 ms
Ie
16
36
80
mW/sr
mW/sr
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
UNIT
IF = 1 A, tp = 100 μs
Ie
135
290
-
IF = 100 mA, tp = 20 ms
φe
-
40
-
mW
IF = 20 mA
TKφe
-
-0.6
-
%/K
ϕ
-
± 25
-
deg
nm
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
-
940
-
Spectral bandwidth
IF = 100 mA
Δλ
-
25
-
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA
tr
-
15
-
ns
Fall time
IF = 100 mA
tf
-
15
-
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
IF - Forward Current (mA)
I F - Forward Current (A)
10 1
IFSM = 1 A (Single Pulse)
t p/T = 0.01
0.05
10 0
0.1
0.5
1.0
10 -1
-2
10
96 11987
100
tp = 100 µs
tp/T = 0.001
10
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
0
10 2
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Rev. 1.9, 03-Nov-16
1000
13600
1
2
3
4
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 81006
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL4400
www.vishay.com
Vishay Semiconductors
1000
Φe rel - Relative Radiant Power (%)
100
100
10
1
0.1
1
10
100
90
IF = 30 mA
80
70
60
50
40
30
20
10
0
840
1000
880
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
920
960
1040
Fig. 8 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I e rel - Relative Radiant Intensity
Φ e - Radiant Power (mW)
1000
λ - Wavelength (nm)
21445
100
10
1
0.1
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
13602
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
10 4
ϕ - Angular Displacement
Ie - Radiant Intensity (mW/sr)
tp = 100 μs
0.4
0.2
0
14328
Fig. 6 - Radiant Power vs. Forward Current
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
1.6
Ie rel; Φe rel
1.2
IF = 20 mA
0.8
0.4
0
-10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.9, 03-Nov-16
Document Number: 81006
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL4400
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
Ø 3.2 ± 0.15
A
AREA NOT PLANE
5.8 ± 0.3
34.4 ± 0.5
< 0.6
(2.5)
3.4 ± 0.15
4.4 ± 0.3
R1.4 (sphere)
Ø 2.9 ± 0.15
2.54 nom.
1.5 ± 0.5
+ 0.15
+ 0.2
0.5 - 0.1
0.4 - 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Rev. 1.9, 03-Nov-16
Document Number: 81006
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
