TSAL5300

TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 940 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 45 ± 22 940 800 TSAL5300 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSAL5300 TSAL5300-MSZ PACKAGING REMARKS PACKAGE FORM Bulk Tape and ammopack MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 5000 pcs, 1000 pcs/ammopack T-1¾ T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 160 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Rev. 2.1, 24-Aug-11 Document Number: 81008 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL5300 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.6 3 V Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 30 45 260 350 Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. UNIT mV/K 10 μA 150 mW/sr 25 pF IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms φe 35 mW IF = 20 mA TKφe - 0.6 %/K ϕ ± 22 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1 A tr 500 ns IF = 100 mA tf 800 ns IF = 1 A tf 500 ns Method: 63 % encircled energy d 2.3 mm Rise time Fall time Virtual source diameter Rev. 2.1, 24-Aug-11 Document Number: 81008 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL5300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Φ e - Radiant Power (mW) I F - Forward Current (A) 10 1 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 Fig. 3 - Pulse Forward Current vs. Pulse Duration 104 1.6 103 1.2 102 tP = 100 µs tP/T = 0.001 101 10 4 IF = 20 mA 0.8 0.4 100 0 1 2 3 0 - 10 0 10 4 VF - Forward Voltage (V) 13600 50 100 140 T amb - Ambient Temperature (°C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 Φe rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Ie rel; Φe rel IF - Forward Current (mA) 100 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 0.1 100 14327 101 102 103 I F - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 2.1, 24-Aug-11 890 104 14291 940 990 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 81008 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL5300 www.vishay.com 0° 10° Vishay Semiconductors 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie rel - Relative Radiant Intensity 30° 80° 0.6 94 8883 0.4 0.2 0 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C Ø 5.8 ± 0.15 A