TSAL6200

TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 17° 94 8389 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. APPLICATIONS • Infrared remote requirements control units with high power • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 72 ± 17 940 15 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Rev. 2.4, 13-Mar-14 Document Number: 81010 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 10 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.2 3 V Temperature coefficient of VF IF = 1 mA TKVF -1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 40 72 340 600 Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. mV/K 10 μA 200 mW/sr 40 pF IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms φe 40 mW IF = 20 mA TKφe -0.6 %/K ϕ ± 17 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 30 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns Rev. 2.4, 13-Mar-14 Document Number: 81010 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 tp = 100 μs Phie - Radiant Power (mW) I F - Forward Current (A) 10 1 100 10 1 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 1 10 2 1000 Fig. 6 - Radiant Power vs. Forward Current 1.6 1000 IF - Forward Current (mA) 100 IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration 1.2 Ie rel; Φe rel 100 IF = 20 mA 0.8 10 0.4 tp = 100 µs tp/T= 0.001 0 -10 0 10 1 0 1 2 3 VF - Forward Voltage (V) 21534 94 7993 Fig. 4 - Forward Current vs. Forward Voltage 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 100 Φe rel - Relative Radiant Power (%) Ie - Radiant Intensity (mW/sr) 10 tp = 100 μs 100 10 1 0.1 1 10 100 Fig. 5 - Radiant Intensity vs. Forward Current Rev. 2.4, 13-Mar-14 80 21445 IF = 30 mA 70 60 50 40 30 20 10 0 840 1000 IF - Forward Current (mA) 90 880 920 960 1000 1040 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 81010 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com 0° Vishay Semiconductors 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I e rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0.2 0 14329 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 2.4, 13-Mar-14 Document Number: 81010 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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