TSHA4401

TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions (in mm): Ø 3 Peak wavelength: p = 875 nm High reliability Angle of half intensity:  = ± 20° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DESCRIPTION • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorption of 875 nm radiation in glass The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. PRODUCT SUMMARY Ie (mW/sr)  (deg) p (nm) tr (ns) TSHA4400 20 ± 20 875 600 TSHA4401 30 ± 20 875 600 COMPONENT Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS PACKAGE FORM TSHA4400 ORDERING CODE Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSHA4401 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM Surge forward current tp = 100 μs IFSM 2 A PV 180 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t  5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 15-Sep-14 Document Number: 81017 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 300 K/W 100 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21311 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21312 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1.5 A, tp = 100 μs VF 3.2 4.9 V IF = 100 mA TKVF -1.6 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 100 mA TKe -0.7 %/K  ± 20 deg Peak wavelength IF = 100 mA p 875 nm Spectral bandwidth IF = 100 mA  80 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns d 1.8 mm Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of e Angle of half intensity Rise time Fall time Virtual source diameter MIN. mV/K 100 μA TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 mA, tp = 100 μs Radiant power Rev. 1.8, 15-Sep-14 IF = 100 mA, tp = 20 ms PART SYMBOL MIN. TYP. MAX. UNIT TSHA4400 Ie 12 20 60 mW/sr TSHA4401 Ie 16 30 60 mW/sr TSHA4400 Ie 140 240 mW/sr TSHA4401 Ie 190 360 mW/sr TSHA4400 e 20 mW TSHA4401 e 24 mW Document Number: 81017 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 TSHA 4401 100 TSHA 4400 10 0.5 10 -1 10 -2 94 7947 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration Φ e - Radiant Power (mW) IF - Forward Current (mA) 1000 tp = 100 µs tp/T= 0.001 10 3 10 2 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 8005 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7943 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 1 10 1 10 2 10 3 I F - Forward Current (mA) 94 7942 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0 - 10 0 10 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.8, 15-Sep-14 94 8020 50 100 140 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81017 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors 0° 10° 20° 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 980 880 λ - Wavelenght (nm) 94 8000 Fig. 9 - Relative Radiant Power vs. Wavelength 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity Φe - Relative Radiant Power 1.25 0 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A < 0.6 (2.5) 3.4 ± 0.15 R1.4 (sphere) AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 4.4 ± 0.3 3.2 ± 0.15 C Ø 2.9 ± 0.1 1.5 ± 0.5 + 0.15 0.5 + 0.2 - 0.1 0.4 - 0.05 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5264.01-4 Issue: 4; 28.07.14 Rev. 1.8, 15-Sep-14 Document Number: 81017 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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