TSHA5201

TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° • Low forward voltage 94 8390 • Suitable for high pulse current operation • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSHA5200 40 ± 12 875 600 TSHA5201 50 ± 12 875 600 TSHA5202 60 ± 12 875 600 TSHA5203 65 ± 12 875 600 COMPONENT Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS PACKAGE FORM TSHA5200 ORDERING CODE Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity Rev. 2.0, 24-Aug-11 Document Number: 81019 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage IF 100 mA Peak forward current Forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 2.5 A PV 180 mW Power dissipation Junction temperature Operating temperature range Storage temperature range 100 °C - 40 to + 85 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Tj Tamb 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.5 1.8 IF = 100 mA TKVF - 1.6 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 20 mA TKφe - 0.7 %/K ϕ ± 12 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter Rev. 2.0, 24-Aug-11 100 μA IF = 1 A tr 300 ns IF = 100 mA tf 600 ns IF = 1 A tf 300 ns d 3.7 mm Document Number: 81019 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 1 A, tp = 100 μs Forward voltage IF = 100 mA, tp = 20 μs Radiant intensity IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 μs Radiant power PART SYMBOL TYP. MAX. UNIT TSHA5200 VF MIN. 2.8 3.5 V TSHA5201 VF 2.8 3.5 V TSHA5202 VF 2.8 3.5 V TSHA5203 VF 2.8 3.5 V TSHA5200 Ie 25 40 125 mW/sr TSHA5201 Ie 30 50 125 mW/sr TSHA5202 Ie 36 60 125 mW/sr TSHA5203 Ie 50 65 125 TSHA5200 Ie 200 330 mW/sr TSHA5201 Ie 260 400 mW/sr TSHA5202 Ie 330 460 mW/sr TSHA5203 Ie 400 530 mW/sr TSHA5200 φe 22 mW TSHA5201 φe 23 mW TSHA5202 φe 24 mW TSHA5203 φe 25 mW mW/sr BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 VF rel - Relative Forward Voltage (V) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 94 8003 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 10 -1 10 0 10 1 t p - Pulse Duration (ms) 0 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7990 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 10 4 1000 I e - Radiant Intensity (mW/sr) IF - Forward Current (mA) TSHA 5203 tp = 100 µs tp/T= 0.001 10 3 10 2 10 1 TSHA 5202 100 TSHA 5201 10 TSHA 5200 1 0 94 8005 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Rev. 2.0, 24-Aug-11 10 0 94 8006 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current Document Number: 81019 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors 1.25 Φ e - Relative Radiant Power 100 10 1 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8007 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 10 4 Fig. 7 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0° 1.6 10° 20° Ie rel - Relative Radiant Intensity 30° 1.2 I e rel; Φe rel 980 880 λ - Wavelenght (nm) 94 8000 I F = 20 mA 0.8 0.4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Φe - Radiant Power (mW) 1000 80° 0 - 10 0 10 50 100 140 0.6 Tamb - Ambient Temperature (°C) 94 8020 0.4 0.2 0 94 8008 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C (5.1) < 0.7 8.7 ± 0.3 7.7 ± 0.15 Area not plane 35.9 ± 0.55 12.9 ± 0.3 Ø 5.8 ± 0.15 R 2.49 (sphere) 1.1 ± 0.25 ± 0.15 1 min. Ø5 technical drawings according to DIN specifications 0.5 Drawing-No.: 6.544-5258.04-4 Issue: 9; 23.07.10 + 0.15 - 0.05 0.5 + 0.15 - 0.05 2.54 nom. 96 12121 Rev. 2.0, 24-Aug-11 Document Number: 81019 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000