TSHA6202

TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° • Low forward voltage • Suitable for high pulse current operation 94 8389 • Good spectral matching with Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSHA6200 40 ± 12 875 600 TSHA6201 50 ± 12 875 600 TSHA6202 60 ± 12 875 600 TSHA6203 65 ± 12 875 600 COMPONENT Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION PACKAGING REMARKS PACKAGE FORM TSHA6200 ORDERING CODE Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity Rev. 1.9, 24-Aug-11 Document Number: 81021 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage IF 100 mA Peak forward current Forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 2.5 A PV 180 mW Power dissipation Junction temperature Operating temperature range Storage temperature range 100 °C - 40 to + 85 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Tj Tamb 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.5 1.8 IF = 100 mA TKVF - 1.6 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 20 mA TKφe - 0.7 %/K ϕ ± 12 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter Rev. 1.9, 24-Aug-11 100 μA IF = 1 A tr 300 ns IF = 100 mA tf 600 ns IF = 1 A tf 300 ns d 3.7 mm Document Number: 81021 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 1 A, tp = 100 μs Forward voltage IF = 100 mA, tp = 20 ms Radiant intensity IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms Radiant power PART SYMBOL TYP. MAX. UNIT TSHA6200 VF MIN. 2.8 3.5 V TSHA6201 VF 2.8 3.5 V TSHA6202 VF 2.8 3.5 V TSHA6203 VF 2.8 3.5 V TSHA6200 Ie 25 40 125 mW/sr TSHA6201 Ie 30 50 125 mW/sr TSHA6202 Ie 36 60 125 mW/sr TSHA6203 Ie 50 65 125 TSHA6200 Ie 200 330 mW/sr TSHA6201 Ie 260 400 mW/sr TSHA6202 Ie 330 460 mW/sr TSHA6203 Ie 400 530 mW/sr TSHA6200 φe 22 mW TSHA6201 φe 23 mW TSHA6202 φe 24 mW TSHA6203 φe 25 mW mW/sr BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 1 VF rel - Relative Forward Voltage (V) IF - Forward Current (A) 1.2 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 94 8003 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7990 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 10 4 1000 10 3 I e - Radiant Intensity (mw/sr) IF - Forward Current (mA) TSHA 6203 tp = 100 µs tp/T= 0.001 10 2 10 1 0 94 8005 1 2 3 TSHA 6202 100 4 TSHA 6200 100 94 8745 Rev. 1.9, 24-Aug-11 10 1 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage TSHA 6201 101 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current Document Number: 81021 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors 0° 10° 20° 100 10 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 1000 80° 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 8007 0.6 10 4 0.4 0.2 0 94 8008 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel; Φe rel 1.2 I F = 20 mA 0.8 0.4 0 - 10 0 10 50 100 140 Tamb - Ambient Temperature (°C) 94 8020 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Φ e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 780 94 8000 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 880 980 λ - Wavelenght (nm) Fig. 9 - Relative Radiant Power vs. Wavelength Rev. 1.9, 24-Aug-11 Document Number: 81021 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R2.49 (sphere) (5.1) < 0.7 8.7 ± 0.3 7.7 ± 0.15 A 35.9 ± 0.55 Area not plane Ø 5 ± 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.04-4 Issue: 8; 19.05.09 96 12125 Rev. 1.9, 24-Aug-11 Document Number: 81021 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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