TSHF5210

TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 12 MHz Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 180 ± 10 890 30 TSHF5210 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSHF5210 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current Peak forward current tp/T = 0.5, tp = 100 μs Surge forward current tp = 100 μs Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature t ≤ 5 s, 2 mm from case Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB Rev. 1.4, 24-Aug-11 SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 100 200 1.5 160 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW °C °C °C °C K/W Document Number: 81313 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5210 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.4 1.6 IF = 1 A, tp = 100 μs VF 2.3 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie PARAMETER Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. 180 V V mV/K 10 μA 360 mW/sr 125 120 UNIT pF IF = 1 A, tp = 100 μs Ie 1800 IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 10 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 890 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz d 3.7 mm Cut-off frequency Virtual source diameter Rev. 1.4, 24-Aug-11 Document Number: 81313 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5210 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Tamb < 50 °C tp/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 1 0.5 100 0.01 0.1 0.1 1 10 100 tp - Pulse Duration (ms) 16031 1 10 100 Fig. 6 - Radiant Power vs. Forward Current 1.25 Φe rel - Relative Radiant Power 1000 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 1 0 18873 1 3 2 VF - Forward Voltage (V) 0 800 4 1000 900 λ - Wavelength (nm) 20082 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 0° 10 000 10° 20° 1000 100 tP = 0.1 ms 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 1000 IF - Forward Current (mA) 16971 Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 e- 0.2 100 80° 1 1 21213 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.4, 24-Aug-11 0.6 0.4 0.2 0 15989 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81313 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5210 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.7) 7.7 ± 0.15 8.7 ± 0.3 35.5 ± 0.55 12.5 ± 0.3 Ø 5.8 ± 0.15 A Area not plane 1.1 ± 0.25 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.02-4 Issue: 7; 23.07.10 95 10916 Rev. 1.4, 24-Aug-11 Document Number: 81313 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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