TSOP392..CZ1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP392..CZ1 - series are miniaturized receivers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP392..CZ1 is the
standard IR remote control receiver series, supporting all major transmission codes.
1
20232
2
3
Features
Special Features
• Photo detector and preamplifier in one
package
• Build in filter for carrier frequency of IR
e3
signal
• Shielding against electrical field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Supply voltage range: 2.7 V to 5.5 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
Block Diagram
Mechanical Data
Pinning:
1 = OUT, 2 = VS, 3 = GND
Parts Table
Part
Carrier Frequency
TSOP39230CZ1
30 kHz
TSOP39233CZ1
33 kHz
TSOP39236CZ1
36 kHz
TSOP39237CZ1
36.7 kHz
TSOP39238CZ1
38 kHz
TSOP39240CZ1
40 kHz
TSOP39256CZ1
56 kHz
Application Circuit
16835
20020
2
30 kΩ
VS
IR Transmitter
with
TSALxxxx
VS
+ 2.7 V ... 5.5 V
1
Input
AGC
Band
Pass
Demodulator
OUT
3
PIN
Document Number 81376
Rev. 1.0, 18-Sep-06
Control Circuit
GND
OUT
µC
Circuit
VO
GND
GND
No external components are required
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TSOP392..CZ1
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Supply Voltage
Parameter
(Pin 2)
Test condition
VS
- 0.3 to + 6.0
V
Supply Current
(Pin 2)
IS
3
mA
Output Voltage
(Pin 1)
VO
- 0.3 to (VS + 0.3)
V
Output Current
(Pin 1)
IO
10
mA
Tj
100
°C
Tstg
- 25 to + 85
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Unit
Tamb
- 25 to + 85
°C
Power Consumption
(Tamb ≤ 85 °C)
Ptot
30
mW
Soldering Temperature
t ≤ 10 s, 1 mm from case
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Symbol
Min
Typ.
Max
Ev = 0, VS = 3.3 V
Test condition
ISD
1.0
1.3
1.6
Ev = 40 klx, sunlight
ISH
Supply Voltage
VS
Transmission Distance
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 400 mA
Output Voltage Low (Pin 1)
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
Minimum Irradiance
(30 - 40 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
Minimum Irradiance
(56 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Minimum Irradiance
(30 - 40 kHz)
1.4
2.7
d
Unit
mA
mA
5.5
30
V
m
250
mV
0.4
0.6
mW/m2
Ee min
0.5
0.7
mW/m2
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
0.55
0.7
mW/m2
Minimum Irradiance
(56 kHz)
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
0.65
0.8
mW/m2
Maximum Irradiance
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max
Directivity
Angle of half transmission
distance
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2
ϕ1/2
30
W/m2
± 45
deg
Document Number 81376
Rev. 1.0, 18-Sep-06
TSOP392..CZ1
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Test Signal
t
tpi *
* tpi
T
10/fo is recommended for optimal function
16110
Output Signal
VO
1.0
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
1)
2)
VOH
7/f0 < td < 15/f0
tpi - 5/f 0 < tpo < tpi + 6/f 0
VOL
tpo2 )
td1 )
0.9
Ton ,Toff - Output Pulse Width (ms)
Ee
0.8
0.6
0.5
0.3
0.2
0.0
0.1
1.0
16909
10.0 100.0 1000.0 10000.0
Ee - Irradiance (mW/m²)
Figure 4. Output Pulse Diagram
1.2
E e min /E e - Rel. Responsivity
Output Pulse
0.9
0.8
Input Burst Duration
0.7
0.6
0.5
0.4
0.3
0.2
= 950 nm,
optical test signal, fig. 1
0.1
0.0
0.1
1.0
10.0
Ee - Irradiance (mW/m²)
16908
1.0
0.8
0.6
0.4
f = f0 ± 5 %
f (3 dB) = f0/10
0.2
0.0
0.7
100.0 1000.0 10000.0
0.9
1.1
f/f0 - Relative Frequency
16925
Figure 2. Pulse Length and Sensitivity in Dark Ambient
1.3
Figure 5. Frequency Dependence of Responsivity
Optical Test Signal
4.0
600 µs
t
600 µs
T = 60 ms
94 8134
Output Signal, (see fig. 4)
VOH
VOL
Ton
Toff
t
Ee min - Threshold Irradiance (mW/m2 )
t po - Output Pulse Width (ms)
= 950 nm,
optical test signal, fig. 3
0.1
t
1.0
VO
Toff
0.4
Figure 1. Output Function
Ee
Ton
0.7
3.5
3.0
2.5
2.0
1.5
Document Number 81376
Rev. 1.0, 18-Sep-06
Ambient, = 950 nm
1.0
0.5
0.0
0.01
16911
Figure 3. Output Function
Correlation with ambient light sources:
10 W/m2 1.4 klx (Std.illum.A, T= 2855 K)
10 W/m2 8.2 klx (Daylight, T = 5900 K)
0.10
1.00
10.00
100.00
E - Ambient DC Irradiance (W/m 2)
Figure 6. Sensitivity in Bright Ambient
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3
TSOP392..CZ1
1.0
E e min - Sensitivity (mW/m 2 )
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
17185
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VS - Supply Voltage (V)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
S ( ) rel - Relative Spectral Sensitivity
Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8408
850
950
1150
1050
- Wavelength (nm)
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0°
0.8
10°
20°
30°
Max. Envelope Duty Cycle
0.7
0.6
40°
0.5
1.0
0.4
0.9
50°
0.8
60°
0.3
0.2
f = 38 kHz, Ee = 2 mW/m2
80°
0.0
0
16913
20
40
60
80
100
120
19258
Burst Length (number of cycles/burst)
Ee min - Threshold Irradiance (mW/m²)
0°
0.6
10°
20°
30°
Sensitivity in dark ambient
40°
0.4
1.0
0.3
0.9
50°
0.2
0.8
60°
0.1
0.7
0.0
- 30 - 15 0
15 30 45 60 75
16918
Tamb - Ambient Temperature (°C)
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70°
80°
90
Figure 9. Sensitivity vs. Ambient Temperature
4
0.6 0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
Figure 11. Horizontal Directivity ϕx
Figure 8. Max. Envelope Duty Cycle vs. Burstlength
0.5
70°
0.7
0.1
19259
0.6 0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
Figure 12. Vertical Directivity ϕy
Document Number 81376
Rev. 1.0, 18-Sep-06
TSOP392..CZ1
Vishay Semiconductors
Document Number 81376
Rev. 1.0, 18-Sep-06
IR Signal from fluorescent
lamp with low modulation
0
5
16920
10
Time (ms)
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
The circuit of the TSOP392..CZ1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e. g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some point in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP392..CZ1 it can still receive the data signal.
However the sensitivity is reduced to such a level that
no unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP392..CZ1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast with high or low modulation
(see Figure 13 or Figure 14).
IR Signal
Suitable Data Format
0
16921
5
10
Time (ms)
15
20
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
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TSOP392..CZ1
Vishay Semiconductors
Package Dimensions
20231
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Document Number 81376
Rev. 1.0, 18-Sep-06
TSOP392..CZ1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81376
Rev. 1.0, 18-Sep-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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