TSTA7500

TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 30° 94 8400 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION TSTA7500 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with flat glass window. with APPLICATIONS • Radiation source near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 6 ± 30 875 600 TSTA7500 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TSTA7500 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp ≤ 100 µs IFM 200 Surge forward current tp ≤ 100 µs IFSM 2.5 A PV 180 mW PV 500 mW Tj 100 °C Tstg - 55 to + 100 °C Power dissipation Tcase ≤ 25 °C Junction temperature Storage temperature range Thermal resistance junction/ambient leads not soldered RthJA 450 K/W Thermal resistance junction/case leads not soldered RthJC 150 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 256 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81046 Rev. 1.7, 04-Sep-08 TSTA7500 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 125 R thJC 500 IF - Forward Current (mA) PV - Power Dissipation (mW) 600 400 300 200 R thJA 100 100 R thJC 75 50 R thJA 25 0 0 0 25 50 75 100 125 0 Tamb - Ambient Temperature (°C) 12790 20 Tamb 94 7971 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION SYMBOL IF = 100 mA, tp ≤ 20 ms VF IR = 100 µA V(BR) Breakdown voltage Junction capacitance MIN. TYP. MAX. 1.4 1.8 UNIT V 5 V VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie Radiant power IF = 100 mA, tp ≤ 20 ms φe 10 mW IF = 100 mA TKφe - 0.7 %/K ϕ ± 30 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm IF = 100 mA tr 600 ns IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr 300 ns d 0.5 mm Temperature coefficient of φe Angle of half intensity Rise time Virtual source diameter 20 3.5 pF 6 16 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 IF - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 tp = 100 µs tp/T= 0.001 10 3 10 2 0.5 10 -1 10 -2 94 8003 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81046 Rev. 1.7, 04-Sep-08 94 8005 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 257 TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.6 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1.25 Φ e - Relative Radiant Power Ie - Radiant Intensity (mW/sr) 100 tp = 10 µs tp/T = 0.001 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 1 10 0 94 8188 10 1 10 2 10 3 10 4 IF - Forward Current (mA) Fig. 9 - Relative Radiant Power vs. Wavelength 0° 100 10 1 10 1 10 2 10 3 I F - Forward Current (mA) 20° 40° 1.0 0.9 50° 0.8 60° 0.7 70° 80° 0.6 10 4 Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 258 10 ° 30° I e rel - Relative Radiant Intensity Φ e - Radiant Power (mW) 1000 94 7972 980 880 λ - Wavelenght (nm) 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current 0.1 10 0 140 100 Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 10 50 Tamb - Ambient Temperature (°C) 94 8020 0.4 0.2 0 0.2 0.4 0.6 94 7976 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: emittertechsupport@vishay.com Document Number: 81046 Rev. 1.7, 04-Sep-08 TSTA7500 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters A 5.5 ± 0.15 C 2.54 nom. + 0.05 - 0.10 5.2 ± 0.25 4.7 13.2 ± 0.7 (2.5) CHIP POSITION 0.45 + 0.02 - 0.05 technical drawings 3.9 LENS ± 0.05 according to DIN specifications Drawing-No.: 6.503-5001.01-4 Issue: 2; 24.08.98 96 12173 Document Number: 81046 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 259 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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