TSTS7100
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): ∅ 4.7
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 5°
• Low forward voltage
94 8483
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
DESCRIPTION
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
TSTS7100 is an infrared, 950 nm emitting diode in GaAs
technology in a hermetically sealed TO-18 package with
lens.
APPLICATIONS
with
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
> 10
±5
950
800
TSTS7100
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
TSTS7100
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tcase ≤ 25 °C
IF
250
mA
Peak forward current
tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C
IFM
500
mA
Surge forward current
tp ≤ 100 µs
IFSM
2.5
A
PV
170
mW
PV
500
mW
Tj
100
°C
Tstg
- 55 to + 100
°C
Reverse voltage
Forward current
Power dissipation
Tcase ≤ 25 °C
Junction temperature
Storage temperature range
UNIT
Thermal resistance junction/ambient
leads not soldered
RthJA
450
K/W
Thermal resistance junction/case
leads not soldered
RthJC
150
K/W
Note
Tamb = 25 °C, unless otherwise specified
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260
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81047
Rev. 1.8, 04-Sep-08
TSTS7100
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
300
R thJC
500
IF - Forward Current (mA)
PV - Power Dissipation (mW)
600
400
300
200
R thJA
250
200
RthJC
150
RthJA
100
50
100
0
0
0
25
50
75
100
125
0
Tamb - Ambient Temperature (°C)
12790
20
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
40
60
100
80
Tamb - Ambient Temperature (°C)
94 8018
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp ≤ 20 ms
VF
1.3
1.7
IF = 100 mA
TKVF
- 1.3
mV/K
IR = 100 µA
V(BR)
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Forward voltage
Temperature coefficient of VF
Breakdown voltage
Junction capacitance
MIN.
UNIT
V
5
V
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
Radiant power
IF = 100 mA, tp ≤ 20 ms
φe
7
mW
IF = 100 mA
TKφe
- 0.8
%/K
ϕ
±5
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
IF = 100 mA
tr
800
ns
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
tr
400
ns
d
1.5
mm
Temperature coefficient of φe
Angle of half intensity
Rise time
Virtual source diameter
10
50
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 4
I F - Forward Current (mA)
IF - Forward Current (A)
10 1
I FSM = 2.5 A (single pause)
t p /T= 0.01
10 0
0.05
0.1
0.2
10 3
10 2
10 1
10 0
0.5
10 -1
10 -2
94 8003
10 -1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Document Number: 81047
Rev. 1.8, 04-Sep-08
94 7996
0
1
2
3
4
V F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
For technical questions, contact: emittertechsupport@vishay.com
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261
TSTS7100
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
1.6
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
1.2
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
Tamb - Ambient Temperature (°C)
94 7990
0
- 10 0 10
100
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
1.25
Φe rel - Relative Radiant Power
I e - Radiant Intensity (mW/sr)
100
10
1
t p /T = 0.01 , t p = 20 µs
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
0.1
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
10 4
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
I e rel - Relative Radiant Intensity
1000
100
10
1
1000
950
λ - Wavelength (nm)
94 7994
Fig. 6 - Radiant Intensity vs. Forward Current
Φe - Radiant Power (mW)
140
100
Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
94 8001
50
T amb - Ambient Temperature (°C)
94 7993
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
10 0
94 7977
10 1
10 2
10 3
I F - Forward Current (mA)
Fig. 7 - Radiant Power vs. Forward Current
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262
0.6
10 4
0.4
0.2
0
0.2
0.4
0.6
94 8019
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81047
Rev. 1.8, 04-Sep-08
TSTS7100
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
PACKAGE DIMENSIONS in millimeters
C
± 0.15
A
+ 0.05
- 0.10
6.5
± 0.25
4.7
5.5
2.54 nom.
13.2
± 0.7
(2.5)
Chip position
0.45
+ 0.02
- 0.05
3.9
Lens
± 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.503-5002.02-4
Issue: 1; 24.08.98
14486
Document Number: 81047
Rev. 1.8, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
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263
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Revision: 01-Jan-2022
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Document Number: 91000
