TSUS3400
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Radiant power: 20 mW at IF = 100 mA
• Suitable for DC and high pulse current operation
22592
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
DESCRIPTION
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
TSUS3400 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a clear, blue tinted plastic package.
APPLICATIONS
• Infrared source in photo interrupters, reflective and
transmissive sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
15
± 18
950
800
TSUS3400
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS3400
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
2
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
450
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.5, 25-Aug-11
t ≤ 5 s, 2 mm from case
Document Number: 81051
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS3400
www.vishay.com
Vishay Semiconductors
125
IF - Forward Current (mA)
PV - Power Dissipation (mW)
250
200
150
RthJA
100
50
100
75
RthJA
50
25
0
0
0
94 8029
20
40
60
80
100
0
20
94 7916
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Breakdown voltage
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.3
1.7
IF = 1.5 A, tp = 100 μs
VF
2.2
IF = 100 mA
TKVF
- 1.3
VR = 5 V
IR
IR = 100 μA
V(BR)
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
IF = 1.5 A, tp = 100 μs
Ie
MIN.
7
V
V
mV/K
100
5
UNIT
μA
40
V
30
pF
15
140
35
mW/sr
mW/sr
IF = 100 mA, tp = 20 ms
φe
20
mW
IF = 20 mA
TKφe
- 0.8
%/K
ϕ
± 18
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
d
2.1
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
Rev. 1.5, 25-Aug-11
Document Number: 81051
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS3400
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
I e - Radiant Intensity (mW/sr)
IF - Forward Current (A)
10 1
t p /T = 0.01, I FM = 2 A
0.02
10 0
0.05
0.1
0.2
100
10
1
0.5
10 -1
10 -2
0.1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
94 7947
10 2
10 0
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Φe - Radiant Power (mW)
I F - Forward Current (mA)
1000
10 3
10 2
10 1
10 0
100
10
1
0.1
0
1
2
3
4
V F - Forward Voltage (V)
94 7996
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7980
Fig. 4 - Forward Current vs. Forward Voltage
10 4
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.2
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 -1
10 1
10 2
10 3
I F - Forward Current (mA)
94 7982
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.5, 25-Aug-11
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81051
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS3400
www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
950
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1000
λ - Wavelength (nm)
94 7994
10°
Fig. 9 - Relative Radiant Power vs. Wavelength
0.6
0.4
0.2
0
0.2
0.4
0.6
94 7983
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
95 10915
Rev. 1.5, 25-Aug-11
Document Number: 81051
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
