TSUS4300

TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16° • Low forward voltage 94 8636-1 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 DESCRIPTION TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT TSUS4300 Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 18 ± 16 950 800 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS4300 TSUS4300-ASZ PACKAGING REMARKS Bulk MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM Surge forward current tp = 100 μs IFSM 2 A PV 170 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.9, 20-Oct-15 Document Number: 81053 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 300 K/W 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21315 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21316 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Breakdown voltage Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.3 1.7 V IF = 1.5 A, tp = 100 μs VF - 2.2 - V IF = 100 mA TKVF - -1.3 - mV/K VR = 5 V IR - - 100 μA IR = 100 μA V(BR) 5 40 - VR = 0 V, f = 1 MHz, E = 0 Cj - 30 - pF IF = 100 mA, tp = 20 ms Ie 7 18 35 mW/sr mW/sr IF = 1.5 A, tp = 100 μs Ie - 160 - IF = 100 mA, tp = 20 ms φe - 20 - mW IF = 20 mA TKφe - -0.8 - %/K ϕ - ± 16 - deg Peak wavelength IF = 100 mA λp - 950 - nm Spectral bandwidth IF = 100 mA Δλ - 50 - nm Temperature coefficient of λp IF = 100 mA TKλp - 0.2 - nm/K IF = 100 mA tr - 800 - ns IF = 1.5 A tr - 400 - ns IF = 100 mA tf - 800 - ns IF = 1.5 A tf - 400 - ns d - 2.1 - mm Radiant power Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter Rev. 1.9, 20-Oct-15 Document Number: 81053 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 I e - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 100 10 1 0.5 10 -1 10 -2 94 7947 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration Φe - Radiant Power (mW) I F - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 7996 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7980 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 -1 10 1 10 2 10 3 I F - Forward Current (mA) 94 7979 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.9, 20-Oct-15 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81053 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1000 950 λ - Wavelength (nm) 94 7994 10° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7981 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.2 ± 0.1 C Ø 3 ± 0.1 < 0.6 (2.8) 3.5 ± 0.1 CHIP POSITION AREA NOT PLANE 6.1 ± 0.3 34.7 ± 0.5 4.5 ± 0.3 3.9 ± 0.15 A + 0.15 0.4 - 0.05 + 0.2 2.54 nom. 1.5 ± 0.5 0.5 - 0.1 technical drawings according to DIN specifications Drawing-No.: 6.544-5269.02-4 Issue: 5; 28.07.14 Rev. 1.9, 20-Oct-15 Document Number: 81053 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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