TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Zener voltage specified at 50 μA
• Maximum delta VZ given from 10 μA to 100 μA
• Very high stability
• Low noise
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
1.8 to 43
V
Test current IZT
0.05
mA
VZ specification
Pulse current
Circuit configuration
Single
ORDERING INFORMATION
DEVICE NAME
TZS4678 to TZS4717
ORDERING CODE
TZS4678-GS08 to TZS4717-GS08
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
2500 (per 7" reel)
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF (SOD-80)
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
34 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA ≤ 300 K/W
Ptot
500
mW
IZ
Ptot/VZ
mA
RthJA
500
K/W
Tj
175
°C
Tstg
-65 to +175
°C
VF
1.5
V
Zener current
Junction to ambient air
On PC board 50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Forward voltage (max.)
IF = 100 mA
Rev. 1.9, 25-Nov-2021
Document Number: 85613
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
VZ at IZT1
PART
NUMBER
TEST CURRENT
V
REVERSE CURRENT (3)
VOLTAGE CHANGE (4)
IR at VR
ΔVZ
IZT2 (2)
IZT1
mA
μA
V
V
MIN.
NOM. (1)
MAX.
TZS4678
1.71
1.8
1.89
0.05
120
7.5
1
TZS4679
1.9
2
2.1
0.05
110
5
1
0.7
TZS4680
2.09
2.2
2.31
0.05
100
4
1
0.75
TZS4681
2.28
2.4
2.52
0.05
95
2
1
0.8
TZS4682
2.565
2.7
2.835
0.05
90
1
1
0.85
MAX.
MAX.
0.7
TZS4683
2.85
3
3.15
0.05
85
0.8
1
0.9
TZS4684
3.135
3.3
3.465
0.05
80
7.5
1.5
0.95
TZS4685
3.42
3.6
3.78
0.05
75
7.5
2
0.95
TZS4686
3.705
3.9
4.095
0.05
70
5
2
0.97
TZS4687
4.085
4.3
4.515
0.05
65
4
2
0.99
TZS4688
4.465
4.7
4.935
0.05
60
10
3
0.99
TZS4689
4.845
5.1
5.355
0.05
55
10
3
0.97
TZS4690
5.32
5.6
5.88
0.05
50
10
4
0.96
TZS4691
5.89
6.2
6.51
0.05
45
10
5
0.95
TZS4692
6.46
6.8
7.14
0.05
35
10
5.1
0.9
TZS4693
7.125
7.5
7.875
0.05
31.8
10
5.7
0.75
TZS4694
7.79
8.2
8.61
0.05
29
1
6.2
0.5
TZS4695
8.265
8.7
9.135
0.05
27.4
1
6.6
0.1
TZS4696
8.645
9.1
9.555
0.05
26.2
1
6.9
0.08
TZS4697
9.5
10
10.5
0.05
24.8
1
7.6
0.1
TZS4698
10.45
11
11.55
0.05
21.6
0.05
8.4
0.11
TZS4699
11.4
12
12.6
0.05
20.4
0.05
9.1
0.12
TZS4700
12.35
13
13.65
0.05
19
0.05
9.8
0.13
TZS4701
13.3
14
14.7
0.05
17.5
0.05
10.6
0.14
TZS4702
14.25
15
15.75
0.05
16.3
0.05
11.4
0.15
TZS4703
15.2
16
16.8
0.05
15.4
0.05
12.1
0.16
TZS4704
16.15
17
17.85
0.05
14.5
0.05
12.9
0.17
TZS4705
17.1
18
18.9
0.05
13.2
0.05
13.6
0.18
TZS4706
18.05
19
19.95
0.05
12.5
0.05
14.4
0.19
TZS4707
19
20
21
0.05
11.9
0.01
15.2
0.2
TZS4708
20.9
22
23.1
0.05
10.8
0.01
16.7
0.22
TZS4709
22.8
24
25.2
0.05
9.9
0.01
18.2
0.24
TZS4710
23.75
25
26.25
0.05
9.5
0.01
19
0.25
TZS4711
25.65
27
28.35
0.05
8.8
0.01
20.4
0.27
TZS4712
26.6
28
29.4
0.05
8.5
0.01
21.2
0.28
TZS4713
28.5
30
31.5
0.05
7.9
0.01
22.8
0.3
TZS4714
31.35
33
34.65
0.05
7.2
0.01
25
0.33
TZS4715
34.2
36
37.8
0.05
6.6
0.01
27.3
0.36
TZS4716
37.05
39
40.95
0.05
6.1
0.01
29.6
0.39
TZS4717
40.85
43
45.15
0.05
5.5
0.01
32.6
0.43
Notes
(1) Tolerancing and voltage designation (V ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage.
Z
(2) Maximum Zener current ratings (I ). Maximum Zener current ratings are based on maximum Zener voltage of the individual units
ZM
(3) Reverse leakage current (I ). Reverse leakage currents are guaranteed and measured at V as shown on the table.
R
R
(4) Maximum voltage change (ΔV ). Voltage change is equal to the difference between V at 100 μA and V at 10 μA.
Z
Z
Z
Rev. 1.9, 25-Nov-2021
Document Number: 85613
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
15
TKVZ - Temperature Coefficient
of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
600
500
400
300
200
100
0
95 9602
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
IZ = 5 mA
0
0
10
20
30
40
50
VZ - Z-Voltage (V)
95 9600
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
1000
200
CD - Diode Capacitance (pF)
VZ - Voltage Change (mV)
5
-5
80
120
160 200
40
Tamb - Ambient Temperature (°C)
0
100
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
0
1
0
5
10
15
25
20
VZ - Z-Voltage (V)
95 9598
0
5
10
15
20
25
VZ - Z-Voltage (V)
95 9601
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Fig. 5 - Diode Capacitance vs. Z-Voltage
1.3
100
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
-4
8 x 10 /K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
0
1.0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
10
Tj = 25 °C
1
0.1
0.01
0.001
0.8
- 60
95 9599
IF - Forward Current (mA)
VZtn - Relative Voltage Change
10
0
60
120
180
0
240
Tj - Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
959605
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
Rev. 1.9, 25-Nov-2021
Document Number: 85613
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
50
100
Ptot = 500 mW
Tamb = 25 °C
40
Ptot = 500 mW
Tamb = 25 °C
IZ - Z-Current (mA)
IZ - Z-Current (mA)
80
60
40
20
30
20
10
0
0
0
4
6
12
8
20
15
VZ - Z-Voltage (V)
95 9604
Fig. 7 - Z-Current vs. Z-Voltage
20
25
30
35
VZ - Z-Voltage (V)
95 9607
Fig. 8 - Z-Current vs. Z-Voltage
rZ - Differential Z-Resistance (Ω)
1000
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
5
10
15
20
25
VZ - Z-Voltage (V)
95 9606
Zthp - Thermal Resistance for Pulse Cond. (K/W)
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tj max. - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
1
10-1
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
tp - Pulse Length (ms)
102
95 9603
Fig. 10 - Thermal Response
Rev. 1.9, 25-Nov-2021
Document Number: 85613
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80
Rev. 1.9, 25-Nov-2021
Document Number: 85613
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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