TZS4714-GS08

TZS4678 to TZS4717 www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Zener voltage specified at 50 μA • Maximum delta VZ given from 10 μA to 100 μA • Very high stability • Low noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 1.8 to 43 V Test current IZT 0.05 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION DEVICE NAME TZS4678 to TZS4717 ORDERING CODE TZS4678-GS08 to TZS4717-GS08 TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 2500 (per 7" reel) 12 500/box PACKAGE PACKAGE NAME QuadroMELF (SOD-80) WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 34 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT RthJA ≤ 300 K/W Ptot 500 mW IZ Ptot/VZ mA RthJA 500 K/W Tj 175 °C Tstg -65 to +175 °C VF 1.5 V Zener current Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm Junction temperature Storage temperature range Forward voltage (max.) IF = 100 mA Rev. 1.9, 25-Nov-2021 Document Number: 85613 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZS4678 to TZS4717 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE VZ at IZT1 PART NUMBER TEST CURRENT V REVERSE CURRENT (3) VOLTAGE CHANGE (4) IR at VR ΔVZ IZT2 (2) IZT1 mA μA V V MIN. NOM. (1) MAX. TZS4678 1.71 1.8 1.89 0.05 120 7.5 1 TZS4679 1.9 2 2.1 0.05 110 5 1 0.7 TZS4680 2.09 2.2 2.31 0.05 100 4 1 0.75 TZS4681 2.28 2.4 2.52 0.05 95 2 1 0.8 TZS4682 2.565 2.7 2.835 0.05 90 1 1 0.85 MAX. MAX. 0.7 TZS4683 2.85 3 3.15 0.05 85 0.8 1 0.9 TZS4684 3.135 3.3 3.465 0.05 80 7.5 1.5 0.95 TZS4685 3.42 3.6 3.78 0.05 75 7.5 2 0.95 TZS4686 3.705 3.9 4.095 0.05 70 5 2 0.97 TZS4687 4.085 4.3 4.515 0.05 65 4 2 0.99 TZS4688 4.465 4.7 4.935 0.05 60 10 3 0.99 TZS4689 4.845 5.1 5.355 0.05 55 10 3 0.97 TZS4690 5.32 5.6 5.88 0.05 50 10 4 0.96 TZS4691 5.89 6.2 6.51 0.05 45 10 5 0.95 TZS4692 6.46 6.8 7.14 0.05 35 10 5.1 0.9 TZS4693 7.125 7.5 7.875 0.05 31.8 10 5.7 0.75 TZS4694 7.79 8.2 8.61 0.05 29 1 6.2 0.5 TZS4695 8.265 8.7 9.135 0.05 27.4 1 6.6 0.1 TZS4696 8.645 9.1 9.555 0.05 26.2 1 6.9 0.08 TZS4697 9.5 10 10.5 0.05 24.8 1 7.6 0.1 TZS4698 10.45 11 11.55 0.05 21.6 0.05 8.4 0.11 TZS4699 11.4 12 12.6 0.05 20.4 0.05 9.1 0.12 TZS4700 12.35 13 13.65 0.05 19 0.05 9.8 0.13 TZS4701 13.3 14 14.7 0.05 17.5 0.05 10.6 0.14 TZS4702 14.25 15 15.75 0.05 16.3 0.05 11.4 0.15 TZS4703 15.2 16 16.8 0.05 15.4 0.05 12.1 0.16 TZS4704 16.15 17 17.85 0.05 14.5 0.05 12.9 0.17 TZS4705 17.1 18 18.9 0.05 13.2 0.05 13.6 0.18 TZS4706 18.05 19 19.95 0.05 12.5 0.05 14.4 0.19 TZS4707 19 20 21 0.05 11.9 0.01 15.2 0.2 TZS4708 20.9 22 23.1 0.05 10.8 0.01 16.7 0.22 TZS4709 22.8 24 25.2 0.05 9.9 0.01 18.2 0.24 TZS4710 23.75 25 26.25 0.05 9.5 0.01 19 0.25 TZS4711 25.65 27 28.35 0.05 8.8 0.01 20.4 0.27 TZS4712 26.6 28 29.4 0.05 8.5 0.01 21.2 0.28 TZS4713 28.5 30 31.5 0.05 7.9 0.01 22.8 0.3 TZS4714 31.35 33 34.65 0.05 7.2 0.01 25 0.33 TZS4715 34.2 36 37.8 0.05 6.6 0.01 27.3 0.36 TZS4716 37.05 39 40.95 0.05 6.1 0.01 29.6 0.39 TZS4717 40.85 43 45.15 0.05 5.5 0.01 32.6 0.43 Notes (1) Tolerancing and voltage designation (V ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage. Z (2) Maximum Zener current ratings (I ). Maximum Zener current ratings are based on maximum Zener voltage of the individual units ZM (3) Reverse leakage current (I ). Reverse leakage currents are guaranteed and measured at V as shown on the table. R R (4) Maximum voltage change (ΔV ). Voltage change is equal to the difference between V at 100 μA and V at 10 μA. Z Z Z Rev. 1.9, 25-Nov-2021 Document Number: 85613 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZS4678 to TZS4717 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 15 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 95 9602 Fig. 1 - Total Power Dissipation vs. Ambient Temperature IZ = 5 mA 0 0 10 20 30 40 50 VZ - Z-Voltage (V) 95 9600 Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage 1000 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 5 -5 80 120 160 200 40 Tamb - Ambient Temperature (°C) 0 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 25 20 VZ - Z-Voltage (V) 95 9598 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9601 Fig. 2 - Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C Fig. 5 - Diode Capacitance vs. Z-Voltage 1.3 100 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K -4 8 x 10 /K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 10 Tj = 25 °C 1 0.1 0.01 0.001 0.8 - 60 95 9599 IF - Forward Current (mA) VZtn - Relative Voltage Change 10 0 60 120 180 0 240 Tj - Junction Temperature (°C) Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature 959605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Fig. 6 - Forward Current vs. Forward Voltage Rev. 1.9, 25-Nov-2021 Document Number: 85613 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZS4678 to TZS4717 www.vishay.com Vishay Semiconductors 50 100 Ptot = 500 mW Tamb = 25 °C 40 Ptot = 500 mW Tamb = 25 °C IZ - Z-Current (mA) IZ - Z-Current (mA) 80 60 40 20 30 20 10 0 0 0 4 6 12 8 20 15 VZ - Z-Voltage (V) 95 9604 Fig. 7 - Z-Current vs. Z-Voltage 20 25 30 35 VZ - Z-Voltage (V) 95 9607 Fig. 8 - Z-Current vs. Z-Voltage rZ - Differential Z-Resistance (Ω) 1000 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9606 Zthp - Thermal Resistance for Pulse Cond. (K/W) Fig. 9 - Differential Z-Resistance vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tj max. - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tp - Pulse Length (ms) 102 95 9603 Fig. 10 - Thermal Response Rev. 1.9, 25-Nov-2021 Document Number: 85613 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZS4678 to TZS4717 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Rev. 1.9, 25-Nov-2021 Document Number: 85613 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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