TZX27C-TR

厂商：
TFUNK(威世)
封装：
DO-35(DO-204AH)
描述：
DIODEZENER27V500MWDO35

数据手册：

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数据手册
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TZX27C-TR 数据手册

TZX-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 36 V Test current IZT 2; 5 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY TZX-series TZX-series-TAP 10 000 per ammopack (52 mm tape) 30 000/box TZX-series TZX-series-TR 10 000 per 14" reel (52 mm tape) 30 000/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS DO-35 (DO-204AH) 125 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = 25 °C Ptot 500 mW IZ Ptot/VZ mA RthJA 300 K/W Tj 175 °C Tstg -65 to +175 °C VF 1.5 V Zener current Thermal resistance junction to ambient air l = 4 mm, TL =constant Junction temperature Storage temperature range Forward voltage (max.) IF = 200 mA Rev. 2.6, 25-Nov-2021 Document Number: 85614 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR μA V MAX. μA ZZ at IZT1 V MAX. Ω MIN. MAX. MAX. TZX2V4A 2.3 2.5 5 5 0.5 50 1 100 TZX2V4B 2.4 2.6 5 5 0.5 50 1 100 TZX2V7A 2.5 2.7 5 5 0.5 10 1 100 TZX2V7B 2.6 2.8 5 5 0.5 10 1 100 TZX2V7C 2.7 2.9 5 5 0.5 10 1 100 TZX3V0A 2.8 3 5 5 0.5 6 1 100 TZX3V0B 2.9 3.1 5 5 0.5 6 1 100 TZX3V0C 3 3.2 5 5 0.5 6 1 100 TZX3V3A 3.1 3.3 5 5 1 2 1 100 TZX3V3B 3.2 3.4 5 5 1 2 1 100 TZX3V3C 3.3 3.5 5 5 1 2 1 100 TZX3V6A 3.4 3.6 5 5 1 2 1 100 TZX3V6B 3.5 3.7 5 5 1 2 1 100 TZX3V6C 3.6 3.8 5 5 1 2 1 100 TZX3V9A 3.7 3.9 5 5 1 2 1 100 TZX3V9B 3.8 4 5 5 1 2 1 100 TZX3V9C 3.9 4.1 5 5 1 2 1 100 TZX4V3A 4 4.2 5 5 1.5 1 1 100 TZX4V3B 4.1 4.3 5 5 1.5 1 1 100 TZX4V3C 4.2 4.4 5 5 1.5 1 1 100 TZX4V3D 4.3 4.5 5 5 1.5 1 1 100 TZX4V7A 4.4 4.6 5 5 2 6 2 100 TZX4V7B 4.5 4.7 5 5 2 5 2 100 TZX4V7C 4.6 4.8 5 5 2 4 2 100 TZX4V7D 4.7 4.9 5 5 2 3 2 100 TZX5V1A 4.8 5 5 5 2 2 2 100 TZX5V1B 4.9 5.1 5 5 2 2 2 100 TZX5V1C 5 5.2 5 5 2 2 2 100 TZX5V1D 5.1 5.3 5 5 2 2 2 100 TZX5V6A 5.2 5.5 5 5 2 1 2 40 TZX5V6B 5.3 5.6 5 5 2 1 2 40 TZX5V6C 5.4 5.7 5 5 2 1 2 40 TZX5V6D 5.5 5.8 5 5 2 1 2 40 TZX5V6E 5.6 5.9 5 5 2 1 2 40 TZX6V2A 5.7 6 5 1 3 3 4 15 TZX6V2B 5.8 6.1 5 1 3 3 4 15 TZX6V2C 6 6.3 5 1 3 3 4 15 TZX6V2D 6.1 6.4 5 1 3 3 4 15 TZX6V2E 6.3 6.6 5 1 3 3 4 15 TZX6V8A 6.4 6.7 5 1 3.5 2 4 15 TZX6V8B 6.6 6.9 5 1 3.5 2 4 15 TZX6V8C 6.7 7 5 1 3.5 2 4 15 TZX6V8D 6.9 7.2 5 1 3.5 2 4 15 Rev. 2.6, 25-Nov-2021 Document Number: 85614 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER MIN. MAX. DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR μA V MAX. μA ZZ at IZT1 V MAX. Ω MAX. TZX7V5A 7 7.3 5 1 5 30 6.65 15 TZX7V5B 7.2 7.6 5 1 5 30 6.84 15 TZX7V5C 7.3 7.7 5 1 5 30 6.94 15 TZX7V5D 7.5 7.9 5 1 5 30 7.13 15 TZX7V5X 7.07 7.45 5 1 5 30 6.72 15 TZX8V2A 7.7 8.1 5 1 6.2 0.1 7.32 20 TZX8V2B 7.9 8.3 5 1 6.2 0.1 7.5 20 TZX8V2C 8.1 8.5 5 1 6.2 0.1 7.7 20 TZX8V2D 8.3 8.7 5 1 6.2 0.1 7.98 20 TZX9V1A 8.5 8.9 5 1 6.8 0.04 8.08 20 TZX9V1B 8.7 9.1 5 1 6.8 0.04 8.27 20 TZX9V1C 8.9 9.3 5 1 6.8 0.04 8.46 20 TZX9V1D 9.1 9.5 5 1 6.8 0.04 8.65 20 TZX9V1E 9.3 9.7 5 1 6.8 0.04 8.84 20 TZX10A 9.5 9.9 5 1 7.5 0.04 9.03 25 TZX10B 9.7 10.1 5 1 7.5 0.04 9.22 25 TZX10C 9.9 10.3 5 1 7.5 0.04 9.41 25 TZX10D 10.2 10.6 5 1 7.5 0.04 9.69 25 TZX11A 10.4 10.8 5 1 8.2 0.04 9.88 25 TZX11B 10.7 11.1 5 1 8.2 0.04 10.2 25 TZX11C 10.9 11.3 5 1 8.2 0.04 10.4 25 TZX11D 11.1 11.6 5 1 8.2 0.04 10.5 25 TZX12A 11.4 11.9 5 1 9.5 0.04 10.8 35 TZX12B 11.6 12.1 5 1 9.5 0.04 11 35 TZX12C 11.9 12.4 5 1 9.5 0.04 11.3 35 TZX12D 12.2 12.7 5 1 9.5 0.04 11.6 35 TZX12X 11.44 12.03 5 1 9.5 0.04 10.9 35 TZX13A 12.4 12.9 5 1 10 0.04 11.8 35 TZX13B 12.6 13.1 5 1 10 0.04 12 35 TZX13C 12.9 13.4 5 1 10 0.04 12.3 35 TZX14A 13.2 13.7 5 1 11 0.04 12.5 35 TZX14B 13.5 14 5 1 11 0.04 12.8 35 TZX14C 13.8 14.3 5 1 11 0.04 13.1 35 TZX15A 14.1 14.7 5 1 11.5 0.04 13.4 40 TZX15B 14.5 15.1 5 1 11.5 0.04 13.8 40 TZX15C 14.9 15.5 5 1 11.5 0.04 14.2 40 TZX15X 14.35 15.09 5 1 11.5 0.04 13.6 40 TZX16A 15.3 15.9 5 1 12 0.04 14.5 45 TZX16B 15.7 16.5 5 1 12 0.04 14.9 45 TZX16C 16.3 17.1 5 1 12 0.04 15.5 45 TZX18A 16.9 17.7 5 1 13 0.04 16.1 55 TZX18B 17.5 18.3 5 1 13 0.04 16.6 55 TZX18C 18.1 19 5 1 13 0.04 17.2 55 TZX20A 18.8 19.7 2 1 15 0.04 17.9 60 TZX20B 19.5 20.4 2 1 15 0.04 18.5 60 TZX20C 20.2 21.2 2 1 15 0.04 19.2 60 TZX22A 20.9 21.9 2 1 17 0.04 19.9 65 Rev. 2.6, 25-Nov-2021 Document Number: 85614 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR μA V μA MAX. ZZ at IZT1 Ω V MIN. MAX. MAX. MAX. TZX22B 21.6 22.6 2 1 17 0.04 20.5 TZX22C 22.3 23.3 2 1 17 0.04 21.2 65 TZX24A 22.9 24 2 1 19 0.04 21.8 70 TZX24B 23.6 24.7 2 1 19 0.04 22.4 70 TZX24C 24.3 25.5 2 1 19 0.04 23.1 70 TZX24X 22.61 23.77 2 1 19 0.04 21.5 70 65 TZX27A 25.2 26.6 2 1 21 0.04 23.9 80 TZX27B 26.2 27.6 2 1 21 0.04 24.9 80 TZX27C 27.2 28.6 2 1 21 0.04 25.8 80 TZX27X 26.99 28.39 2 1 21 0.04 25.6 80 TZX30A 28.2 29.6 2 1 23 0.04 26.8 100 TZX30B 29.2 30.6 2 1 23 0.04 27.7 100 TZX30C 30.2 31.6 2 1 23 0.04 28.7 100 TZX30X 29.02 30.51 2 1 23 0.04 27.6 100 TZX33A 31.2 32.6 2 1 25 0.04 29.6 120 TZX33B 32.2 33.6 2 1 25 0.04 30.6 120 TZX33C 33.2 34.5 2 1 25 0.04 31.5 120 TZX36A 34.2 35.7 2 1 27 0.04 32.5 140 TZX36B 35.3 36.8 2 1 27 0.04 33.5 140 TZX36C 36.4 38 2 1 27 0.04 34.6 140 TZX36X 35.36 37.19 2 1 27 0.04 33.6 140 Notes • Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin. ≤ 40 nA at Tj = 25 °C (1) Additional measurement 500 Ptot - Total Power Dissipation (mW) RthJA - Therm. Resist. Junction Ambient (K/W) BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 400 300 l l 200 100 TL = constant 0 0 5 10 15 I - Lead Length (mm) 600 500 400 300 200 100 0 0 20 95 9611 Fig. 1 - Thermal Resistance vs. Lead Length 95 9602 80 120 160 200 40 Tamb - Ambient Temperature (°C) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Rev. 2.6, 25-Nov-2021 Document Number: 85614 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 1000 100 IZ = 5 mA 10 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9598 0 10 5 15 20 25 VZ - Z-Voltage (V) 95 9601 Fig. 6 - Diode Capacitance vs. Z-Voltage Fig. 3 - Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C 1.3 100 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) VZtn - Relative Voltage Change 150 Tj = 25 °C 1 0.1 0.01 0.001 0.8 - 60 0 60 120 180 0 240 Tj - Junction Temperature (°C) 95 9599 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) 959605 Fig. 4 - Typical Change of Working Voltage vs. Junction Temperature Fig. 7 - Forward Current vs. Forward Voltage 15 100 80 10 IZ - Z-Current (mA) TKVZ - Temperature Coefficient of VZ (10-4/K) 10 5 IZ = 5 mA 0 Ptot = 500 mW Tamb = 25 °C 60 40 20 -5 0 0 95 9600 10 20 30 40 50 VZ - Z-Voltage (V) Fig. 5 - Temperature Coefficient of Vz vs. Z-Voltage 0 95 9604 4 6 8 12 20 VZ - Z-Voltage (V) Fig. 8 - Z-Current vs. Z-Voltage Rev. 2.6, 25-Nov-2021 Document Number: 85614 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors 50 Ptot = 500 mW Tamb = 25 °C 40 IZ - Z-Current (mA) rZ - Differential Z-Resistance (Ω) 1000 30 20 10 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 15 20 25 30 35 0 VZ - Z-Voltage (V) 95 9607 Zthp - Thermal Resistance for Pulse Cond. (K/W) 10 15 25 20 VZ - Z-Voltage (V) 95 9606 Fig. 9 - Z-Current vs. Z-Voltage 5 Fig. 10 - Differential Z-Resistance vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tj max. - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 95 9603 tp - Pulse Length (ms) Fig. 11 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.6, 25-Nov-2021 Document Number: 85614 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TZX27C-TR

物料型号：TZX系列，由Vishay Semiconductors生产的小信号齐纳二极管。

器件简介： - 符合RoHS标准，无卤素。 - 具有非常尖锐的反向特性、低反向电流水平、高稳定性、低噪声。

引脚分配：文档中未明确提供引脚分配信息，但通常齐纳二极管有阳极和阴极两个引脚。

参数特性： - 工作电压范围（Vz range nom.）：2.4V至36V。 - 测试电流（Izr）：范围在2.5mA至5mA。 - 齐纳电压规格和电路配置：脉冲电流和单电路配置。

功能详解： - 主要用于电压稳定。

应用信息： - 用于电压稳定。

封装信息： - 封装类型为DO-35 (DO-204AH)，重量为125mg。 - 模具化合物阻燃等级为UL94V-0。 - 湿度敏感等级为MSL 1级（根据J-STD-020）。 - 焊接条件：峰值温度最高260°C。

绝对最大额定值（环境温度Tamb = 25°C）： - 总功耗（Ptot）：500mW。 - 齐纳电流（Iz）：根据Ptot和Vz计算的mA值。 - 结到环境空气的热阻（RthJA）：300 K/W。 - 结温（Tj）：175°C。 - 存储温度范围（Tstg）：-65至+175°C。 - 最大正向电压（VF）：1.5V。

电气特性：文档提供了不同型号的齐纳二极管在特定测试电流下的电气特性，包括齐纳电压范围、反向漏电流、动态电阻等。

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