U2B-E3/52T

U2B, U2C, U2D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) Cathode Anode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES 3D Models For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA 3D 3D IF(AV) 2.0 A VRRM 100 V, 150 V, 200 V IFSM 50 A trr 20 ns VF at IF = 2.0 A 0.76 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configuration Single Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U2B U2C U2D U2B U2C U2D 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V Revision: 09-Apr-2020 Document Number: 89096 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U2B, U2C, U2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage IF = 2 A Reverse current Rated VR TA = 100 °C TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A Reverse recovery time SYMBOL TA = 25 °C VF (1) IR (2) TYP. MAX. 0.86 0.90 0.76 0.83 - 10 180 350 - 20 27 - 35 - TA = 25 °C IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Storage charge IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz TA = 25 °C trr TA = 100 °C TA = 25 °C TA = 100 °C Qrr CJ UNIT V μA ns 9 - 19 - 16 - pF U2D UNIT nC Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RθJA Typical thermal resistance U2B U2C (1) 105 RθJM (1) °C/W 18 Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R θJA - junction to ambient, RθJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U2D-E3/52T 0.099 52T 750 7" diameter plastic tape and reel U2D-E3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel U2D-M3/52T 0.099 52T 750 7" diameter plastic tape and reel U2D-M3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel Revision: 09-Apr-2020 Document Number: 89096 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U2B, U2C, U2D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 2.0 1.0 0 TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 25 °C 1 100 0.1 TJ = -40 °C 0.01 10 0.001 80 90 100 110 120 130 140 150 10 20 30 40 50 60 70 80 90 100 TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 2.0 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) D = 0.3 D = 0.5 Average Power Loss (W) 1000 1st line 2nd line Resistive or Inductive Load 2nd line Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 10000 10 000 3.0 1.6 D = 0.2 D = 1.0 D = 0.1 1.2 0.8 T 0.4 D = tp/T tp 1.6 2.0 0 0 0.8 0.4 1.2 10 1 0.1 2.4 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title TJ = 150 °C 10 TJ = 125 °C 1000 TJ = 100 °C 1 100 TJ = 25 °C 0.1 TJ = -40 °C 0.01 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 1000 10000 100 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 09-Apr-2020 Document Number: 89096 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U2B, U2C, U2D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 09-Apr-2020 Document Number: 89096 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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