U440/441
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IG Typ (pA)
jVGS1 – VGS2j Max (mV)
U440
–1 to –6
–25
4.5
–1
10
U441
–1 to –6
–25
4.5
–1
20
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D Minimum Parasitics Ensuring Maximum
High-Frequency Performance
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
Two-Chip Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 1 pA
Low Noise
High CMRR: 85 dB.
DESCRIPTION
The U440/441 are matched pairs of JFETs mounted in a single
TO-71 package. This two-chip design reduces parasitics and
gives better performance at very high frequencies while
ensuring extremely tight matching. These devices are an
excellent choice for use as wideband differential amplifiers in
demanding test and measurement applications.
The hermetically-sealed TO-71 package is available with full
military screening per MIL-S-19500 (see Military Information).
For similar products in SO-8 packaging see the
SST440/SST441 data sheet. For low-noise options, see the
SST/U401 series data sheet. For low-leakage alternatives,
see the U421/423 data sheet.
TO-71
S1
G2
1
D1
6
2
D2
5
3
4
G1
S2
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V
Power Dissipation :
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
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8-1
U440/441
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U440
Parameter
Symbol
Test Conditions
Typa
Min
Gate-Source Breakdown Voltage
V(BR)GSS
IG = –1 mA, VDS = 0 V
–35
–25
VGS(off)
VDS = 10 V, ID = 1 nA
–3.5
–1
VDS = 10 V, VGS = 0 V
15
6
VGS = –15 V, VDS = 0 V
–1
U441
Max
Min
Max
Unit
Static
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Gate-Source Forward Voltage
IDSS
IGSS
IG
VGS(F)
TA = 125_C
VDG = 10 V, ID = 5 mA
TA = 125_C
IG = 1 mA , VDS = 0 V
–25
–6
–1
30
6
–6
V
30
mA
–500
–500
pA
–500
–500
–2
nA
–1
pA
–0.3
nA
0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Input Capacitance
Ciss
Common-Source Reverse
Transfer Capacitance
Crss
Equivalent Input
Noise Voltage
6
VDS = 10 V, ID = 5 mA
f = 1 kHz
70
9
200
4.5
9
mS
200
mS
3
VDS = 10 V, ID = 5 mA
f = 1 MHz
pF
1
VDS = 10 V, ID = 5 mA
f = 10 kHz
4
|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA
6
D|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA
TA = –55 to 125_C
20
VDS = 10 V, VGS = 0 V
0.97
gfs1
gfs2
VDS = 10 V, ID = 5 mA
f = 1 kHz
0.97
CMRR
VDG = 5 to 10 V, ID = 5 mA
85
en
4.5
nV⁄
√Hz
Matching
Differential Gate-Source Voltage
Gate-Source Voltage
Differential Change
with Temperature
Saturation Drain Current Ratioc
Transconductance Ratioc
Common Mode Rejection Ratio
DT
I DSS1
I DSS2
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
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8-2
10
20
mV
mV/_C
dB
NZFD
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
U440/441
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
20
IG(on) @ ID
16
12
30
20
8
gfs
10
4
IDSS
10 nA
TA = 125_C
I G – Gate Leakage
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
40
100 nA
gfs – Forward Transconductance (mS)
I DSS – Saturation Drain Current (mA)
50
0
–4
–2
–6
–8
IGSS @ 125_C
100 pA
1 mA
1 mA
10 mA
10 pA
TA = 25_C
1 pA
0
0
ID = 10 mA
1 nA
IGSS @ 25_C
0.1 pA
–10
0
4
VGS(off) – Gate-Source Cutoff Voltage (V)
8
12
16
VDG – Drain-Gate Voltage (V)
Output Characteristics
Output Characteristics
10
30
VGS(off) = –5 V
VGS = 0 V
VGS(off) = –2 V
–0.5 V
8
24
6
I D – Drain Current (mA)
VGS = 0 V
I D – Drain Current (mA)
20
–0.2 V
–0.4 V
4
–0.6 V
–0.8 V
2
–1.0 V
–1.5 V
18
–2.0 V
12
–2.5 V
–3.0 V
6
–1.0 V
–3.5 V
–1.2 V
0
0
0
2
4
6
8
10
0
2
VDS – Drain-Source Voltage (V)
Output Characteristics
6
8
10
Output Characteristics
5
15
VGS = 0 V
VGS(off) = –2 V
VGS(off) = –5 V
–0.2 V
–0.4 V
3
–0.6 V
2
–0.8 V
–1.0 V
1
VGS = 0 V
12
I D – Drain Current (mA)
4
I D – Drain Current (mA)
4
VDS – Drain-Source Voltage (V)
–0.5 V
–1.0 V
9
–1.5 V
–2.0 V
6
–2.5 V
–3.0 V
3
–3.5 V
–1.2 V
0
0
0
0.2
0.4
0.6
0.8
VDS – Drain-Source Voltage (V)
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
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8-3
U440/441
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
Transfer Characteristics
10
30
VGS(off) = –2 V
VDS = 10 V
VGS(off) = –5 V
24
TA = –55_C
6
I D – Drain Current (mA)
I D – Drain Current (mA)
8
25_C
4
125_C
2
TA = –55_C
18
25_C
125_C
12
6
0
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–1
VGS – Gate-Source Voltage (V)
–4
–5
10
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
gfs – Forward Transconductance (mS)
VGS(off) = –2 V
gfs – Forward Transconductance (mS)
–3
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
8
TA = –55_C
25_C
6
125_C
4
2
8
TA = –55_C
25_C
6
125_C
4
VDS = 10 V
f = 1 kHz
2
0
0
0
–0.4
–1.2
–0.8
–1.6
–2
0
Circuit Voltage Gain vs. Drain Current
50
rDS(on) – Drain-Source On-Resistance ( Ω )
g fs R L
AV + 1 ) R g
L os
Assume VDD = 15 V, VDS = 5 V
10 V
RL +
ID
30
VGS(off) = –2 V
VGS(off) = –5 V
20
–2
–4
–3
–5
On-Resistance vs. Drain Current
200
40
–1
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
A V – Voltage Gain
–2
VGS – Gate-Source Voltage (V)
10
10
0
160
VGS(off) = –2 V
120
VGS(off) = –5 V
80
40
TA = 25_C
0
0.1
1
ID – Drain Current (mA)
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8-4
VDS = 10 V
10
1
10
100
ID – Drain Current (mA)
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
U440/441
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
5
C rss – Reverse Feedback Capacitance (pF)
f = 1 MHz
C iss – Input Capacitance (pF)
8
6
VDS = 5 V
4
VDS = 0 V
2
VDS = 10 V
f = 1 MHz
4
3
VDS = 5 V
2
VDS = 0 V
1
VDS = 10 V
0
0
0
–4
–8
–12
–16
–20
0
–4
Input Admittance
(mS)
10
–12
–16
Forward Admittance
TA = 25_C
VDS = 10 V
ID = 10 mA
TA = 25_C
VDS = 10 V
ID = 10 mA
gig
10
bis
–bfs
–gfg
1
–20
100
(mS)
100
–8
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
1
big
gfs
bfg
gis
0.1
0.1
100
200
500
1000
100
f – Frequency (MHz)
500
1000
f – Frequency (MHz)
Reverse Admittance
Output Admittance
100
10
TA = 25_C
VDS = 10 V
ID = 10 mA
TA = 25_C
VDS = 10 V
ID = 10 mA
–brs
10
(mS)
(mS)
1
200
–brg
–grs
0.1
–grg
bog, bos
1
grg
gog, gos
0.1
0.01
100
200
500
f – Frequency (MHz)
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
1000
100
200
500
1000
f – Frequency (MHz)
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8-5
U440/441
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
50
150
VDS = 10 V
VGS(off) = –5 V
en – Noise Voltage nV /
Hz
gos – Output Conductance (µS)
40
30
ID = 1 mA
20
ID = 10 mA
10
TA = –55_C
90
25_C
60
30
0
10
100
1k
10 k
100 k
0.1
1
10
f – Frequency (Hz)
ID – Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
200
200
10
VGS(off) = –5 V
160
160
120
120
80
80
rDS
40
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
0
40
0
0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
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–10
gfs – Forward Transconductance (mS)
gos
gos – Output Conductance (µS)
rDS(on) – Drain-Source On-Resistance ( Ω )
120
125_C
0
8-6
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
8
TA = –55_C
6
25_C
4
125_C
2
0
0.1
1
10
ID – Drain Current (mA)
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1