UG12JT-E3/45

UG12xT, UGF12xT, UGB12xT www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES ITO-220AC TO-220AC • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency 2 2 1 1 UG12xT UGF12xT PIN 1 PIN 2 PIN 1 CASE PIN 2 D2PAK (TO-263AB) • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified (for ITO-220AC and TO-263AB package) K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS UGB12xT K PIN 1 HEATSINK PIN 2 DESIGN SUPPORT TOOLS For use in high voltage and high frequency power factor correction, freewheeling diodes and secondary DC/DC rectification application. click logo to get started MECHANICAL DATA Models Available PRIMARY CHARACTERISTICS Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified IF(AV) 12 A VRRM 500 V to 600 V IFSM 135 A trr 30 ns Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test VF at IF = 12 A 1.5 V Polarity: as marked TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configuration Single Mounting Torque: 10 in-lbs max.   MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG12HT UG12JT UNIT Max. repetitive peak reverse voltage VRRM 500 600 V Max. working reverse voltage VRWM 400 480 V Max. RMS voltage VRMS 350 420 V Max. DC blocking voltage VDC 500 Max. average forward rectified current (fig. 1) IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min 600 12 V A IFSM 135 A TJ, TSTG -55 to +150 °C VAC 1500 V Revision: 13-Jun-2018 Document Number: 88758 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG12xT, UGF12xT, UGB12xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage (1) IF = 12 A TJ = 25 °C IF = 12 A TJ = 125 °C SYMBOL UNIT V 1.50 IR TJ = 125 °C UG12JT 1.75 VF TJ = 25 °C Max. reverse current UG12HT 30 μA 4.0 mA IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 30 ns IF = 1.0 A, dI/dt = 50 A/μs,  VR = 30 V, Irr = 0.1 IRM trr 50 ns Typical softness factor (tb/ta) IF = 12 A, dI/dt = 240 A/μs,  VR = 400 V, Irr = 0.1 IRM S 0.9 - Max. reverse recovery current IF = 12 A, dI/dt = 96 A/μs,  VR = 400 V, TC = 125 °C IRM 7.5 A Peak forward recovery time IF = 12 A, dI/dt = 96 A/μs, VF = 1.1 V x VF max. tfr 500 ns Max. reverse recovery time Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL UG12 UGF12 UGB12 UNIT RJC 1.73 3.04 1.73 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.80 45 50/tube Tube TO-220AC UG12JT-E3/45 ITO-220AC UGF12JT-E3/45 1.95 45 50/tube Tube TO-263AB UGB12JT-E3/45 1.33 45 50/tube Tube TO-263AB UGB12JT-E3/81 1.33 81 800/reel Tape and reel ITO-220AC UGF12JTHE3/45 (1) 1.95 45 50/tube Tube TO-263AB UGB12JTHE3/45 (1) 1.33 45 50/tube Tube TO-263AB UGB12JTHE3/81 (1) 1.33 81 800/reel Tape and reel Note AEC-Q101 qualified, available in ITO-220AC and TO-263AB package (1) Revision: 13-Jun-2018 Document Number: 88758 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG12xT, UGF12xT, UGB12xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Instantaneous Reverse Leakage Current (µA) Average Forward Current (A) 16 14 UG12HT, UG12JT 12 10 8 UGF12HT, UGF12JT 6 4 2 1000 TJ = 100 °C 100 10 TJ = 25 °C 1 0 0 25 50 75 100 125 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Leg 200 100 175 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 150 125 100 75 50 10 25 0 1 1 10 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Per Leg 400 Stored Charge/Reverse Recovery Time (nC/ns) Instantaneous Forward Current (A) 100 10 TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 0.1 trr Qrr 350 300 12 A, 240 A/µs, 400 V 250 200 12 A, 240 A/µs, 400 V 150 1 A, 50 A/µs, 30 V 100 1 A, 50 A/µs, 30 V 50 0 0.3 0.5 0.7 0.9 1.0 1.3 1.5 1.7 1.9 2.1 25 50 75 100 125 Instantaneous Forward Voltage (V) Junction Temperature (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Per Leg Fig. 6 - Reverse Switching Characteristics Per Leg Revision: 13-Jun-2018 Document Number: 88758 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG12xT, UGF12xT, UGB12xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC ITO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.076 (1.93) REF. 0.635 (16.13) 0.625 (15.87) 1 PIN 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1 2 0.037 (0.94) 0.027 (0.68) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout K 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.057 (1.45) 0.045 (1.14) CASE 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) PIN 1 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 13-Jun-2018 Document Number: 88758 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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