UG1A, UG1B, UG1C, UG1D
www.vishay.com
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Soft recovery characteristics
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
DO-41 (DO-204AL)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
IF(AV)
1.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
40 A
MECHANICAL DATA
trr
15 ns
VF
0.95 V
Case: DO-41 (DO-204AL)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
TJ max.
150 °C
Package
DO-41 (DO-204AL)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG1A
UG1B
UG1C
UG1D
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 06-Aug-2018
Document Number: 88760
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG1A, UG1B, UG1C, UG1D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 1.0 A
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 100 °C
Maximum stored charge
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 100 °C
Typical junction capacitance
4.0 V, 1 MHz
VALUE
UNIT
VF (1)
0.95
V
5.0
IR
TA = 100 °C
Maximum reverse recovery time
SYMBOL
trr
TJ = 25 °C
15
ns
25
trr
TJ = 25 °C
μA
200
ns
35
8.0
Qrr
nC
12
CJ
7
pF
UG1C
UG1D
UNIT
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
UG1A
UG1B
RJA (1)
60
RJL (1)
20
°C/W
Note
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.334
54
5500
13" diameter paper tape and reel
UG1D-E3/54
UG1D-E3/73
0.334
73
3000
Ammo pack packaging
UG1D-M3/54
0.334
54
5500
13" diameter paper tape and reel
UG1D-M3/73
0.334
73
3000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
1.25
1.00
0.75
0.50
TA, Ambient Temperature
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
0.25
0
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
1.50
TL = 75 °C
8.3 ms Single Half Sine-Wave
10
1
0
25
50
75
100
125
150
175
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 06-Aug-2018
Document Number: 88760
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG1A, UG1B, UG1C, UG1D
www.vishay.com
Vishay General Semiconductor
60
Recovered Charge/Reverse Recovery
Time, nC/ns
Instantaneous Forward Current (A)
100
TJ = 100 °C
10
1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4
50
40
dI/dt = 20 A/μs
dI/dt = 50 A/μs
30
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 150 A/μs
dI/dt = 100 A/μs
20
10
dI/dt = 50 A/μs
dI/dt = 20 A/μs
0
0.6
0.8
1.0
1.2
1.4
0
1.6
25
50
75
100
125
150
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Reverse Switching Charateristics
100
175
100
Junction Capacitance (pF)
Instantaneous Reverse Current (μA)
trr
Qrr
IF = 1.0 A
VR = 30 V
10
TJ = 100 °C
1
TJ = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
0.01
0
20
40
60
80
100
1
10
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 06-Aug-2018
Document Number: 88760
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000