UG2G-E3/54

End of Life - October 2021 UG2F, UG2G www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-15 (DO-204AC) TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 300 V, 400 V IFSM 50 A trr 35 ns VF at IF = 2.0 A 0.910 V TJ max. 150 °C Package DO-15 (DO-204AC) Circuit configuration Single MECHANICAL DATA Case: DO-15 (DO-204AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG2F UG2G UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum average forward rectified current at 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Instantaneous forward voltage IF = 2.0 A IF = 1.0 A IF = 2.0 A TJ = 25 °C VF (1) TJ = 125 °C TJ = 25 °C Maximum reverse current Rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 100 °C Typical reverse recovery time Typical reverse recovery current Typical stored charge Typical junction capacitance SYMBOL IR (2) trr TYP. MAX. 0.921 - 1.016 1.10 0.772 - 0.910 1.02 UNIT V 1.8 10 108 200 23 35 ns ns μA trr 31 - IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM IRM 1.7 - A Qrr 29 - nC 4.0 V, 1 MHz CJ 10 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Revision: 05-May-2021 Document Number: 88995 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life - October 2021 UG2F, UG2G www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance UG2F UG2G RθJA (1) 45 RθJL (1) 14 UNIT °C/W Note (1) Thermal resistance junction to lead PCB mounted 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UG2G-E3/54 0.404 54 4000 13" diameter paper tape and reel UG2G-E3/73 0.404 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 8.3 ms Single Half Sine-Wave Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 0 40 30 20 10 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curves Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current 2.4 D = 0.5 2.0 D = 0.3 D = 1.0 D = 0.2 1.6 D = 0.1 1.2 T 0.8 0.4 D = tp/T tp 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Instantaneous Forward Current (A) 100 D = 0.8 Average Power Loss (W) 50 TJ = 70 °C 10 TJ = 100 °C 1 TJ = 125 °C TJ = 25 °C TJ = 50 °C 0.1 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics Revision: 05-May-2021 Document Number: 88995 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life - October 2021 UG2F, UG2G www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 °C 100 Junction Capacitance (pF) Instantaneous Reverse Current (μA) 1000 TJ = 100 °C TJ = 70 °C 10 TJ = 50 °C 1 TJ = 25 °C 10 1 0.1 0.1 10 20 30 40 50 60 70 80 90 100 1 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-15 (DO-204AC) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 05-May-2021 Document Number: 88995 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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