UG30DPT-E3/45

End of Life - February 2023 UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency 3 • Low forward voltage drop 2 • High forward surge capability 1 TO-3P (TO-247AD) PIN 1 PIN 2 PIN 3 CASE • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 300 A trr 25 ns VF at IF 0.85 V TJ max. 150 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA Case: TO-3P (TO-247AD) Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT Max. repetitive peak reverse voltage VRRM 50 100 150 200 V Max. RMS voltage VRMS 35 70 105 140 V Max. DC blocking voltage VDC 50 100 150 200 V Max. average forward rectified current at TC = 120 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A TJ, TSTG -65 to +150 °C Operating and storage temperature range Revision: 30-Sep-2022 Document Number: 88762 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life - February 2023 UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT 1.0 15 A Max. instantaneous forward voltage per diode UNIT 30 A TJ = 100 °C VF 1.15 10 A V 0.85 TA = 25 °C Max. DC reverse current at rated DC blocking voltage per diode TA = 100 °C Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Max. reverse recovery time IF = 15 A, VR = 30 V, dI/dt = 50 A/μs, IRR = 10 % IRM Max. recovered stored charge IF = 15 A, VR = 30 V, dI/dt = 50 A/μs, IRR = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz 15 IR μA 800 25 trr ns 35 TJ = 25 °C trr TJ = 100 °C ns 50 22 TJ = 25 °C Qrr TJ = 100 °C nC 50 70 CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT Typical thermal resistance per diode (1) RθJC 2.0 UNIT °C/W Note (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N UG30DPT-E3/45 UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.15 30 30/tube Tube Revision: 30-Sep-2022 Document Number: 88762 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life - February 2023 UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 36 30 24 18 12 6 10 TJ = 25 °C 1 0.1 0.01 0 0 25 50 75 100 125 150 175 20 0 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 1000 60 TC = 120 °C 8.3 ms Single Half Sine-Wave Recovered Store Change/Reverse Recovery Time (nC/ns) Peak Forward Surge Current (A) TJ = 100 °C 100 100 IF = 15 A VR = 30 V dI/dt = 150 A/µs dI/dt = 20 A/µs 50 40 dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs 30 dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs 20 10 0 10 1 10 0 100 25 50 75 100 125 150 175 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Reverse Switching Characteristics Per Diode 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 30-Sep-2022 Document Number: 88762 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life - February 2023 UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3P (TO-247AD) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Revision: 30-Sep-2022 Document Number: 88762 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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