UG8HT-E3/45

UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Rectifier TO-220AC FEATURES ITO-220AC • Power pack • Glass passivated chip junction • Ultrafast recovery time • Soft recovery characteristics 2 2 1 1 UG8xT UGF8xT PIN 1 PIN 2 PIN 1 CASE PIN 2 D2PAK (TO-263AB) • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB package)) • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 (for ITO-220AC and D2PAK (TO-263AB package)) 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 UGB8xT PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS AVAILABLE 3D 3D TYPICAL APPLICATIONS For use in high voltage and high frequency power factor correction application. MECHANICAL DATA 3D Models PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 500 V to 600 V IFSM 100 A trr 25 ns tfr 500 ns VF at IF = 8 A 1.5 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configuration Single Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8HT UG8JT UNIT Max. repetitive peak reverse voltage VRRM 500 600 V Max. working reverse voltage VRWM 400 480 V Max. RMS voltage VRMS 350 420 V Max. DC blocking voltage VDC 500 600 V Max. average forward rectified current IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG -55 to +150 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Revision: 24-Jun-2019 Document Number: 88767 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage (1) SYMBOL IF = 8 A TJ = 25 °C IF = 8 A TJ = 125 °C UG8HT 1.75 VF IR TJ = 100 °C TJ = 125 °C Max. reverse recovery time Typical softness factor (tb/ta) Max. reverse recovery current Peak forward recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr UNIT V 1.50 TJ = 25 °C Max. DC reverse current at VRWM UG8JT 30 μA 800 μA 4.0 mA 25 ns IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM trr 50 ns IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, Irr = 0.1 IRM S 1.0 - IF = 8.0 A, dI/dt = 64 A/μs, VR = 400 V, TC = 125 °C IRM 5.5 A IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, TC = 125 °C IRM 10 A tfr 500 ns IF = 8.0 A, dI/dt = 64 A/μs, VF = 1.1 x VF max. Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8 UGF UGB8 UNIT RJC 2.2 5.0 2.2 °C/W Typical thermal resistance from junction to case ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE UG8JT-E3/45 1.80 45 50/tube Tube ITO-220AC UGF8JT-E3/45 1.95 45 50/tube Tube D2PAK (TO-263AB) UGB8JT-E3/45 1.33 45 50/tube Tube D2PAK UGB8JT-E3/81 TO-220AC 1.33 81 800/reel Tape and reel ITO-220AC UGF8JTHE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) UGB8JTHE3_A/P (1) 1.33 P 50/tube Tube 1.33 I 800/reel Tape and reel D2PAK (TO-263AB) PREFERRED P/N (TO-263AB) UGB8JTHE3_A/I (1) Note AEC-Q101 qualified available in ITO-220 and D2PAK (TO-263AB) package (1) Revision: 24-Jun-2019 Document Number: 88767 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTCS CURVES (TA = 25 °C unless otherwise noted) 10 000 Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 12 Resistive or Inductive Load 10 8 UG8, UGB8 6 UG8F 4 2 0 TJ = 100 °C 100 10 TJ = 25 °C 1 25 50 75 100 125 150 175 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 100 1000 TJ = TJ max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 1000 100 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 1 10 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Stored Charge/Reverse Recovery Time (nC/ns) Instantaneous Forward Current (A) 100 10 1 0.1 TJ = 25 °C max. Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.5 350 300 250 Qrr Trr IF = 8.0 A Vr = 30 V 240 A/µs 200 150 60 A/µs 100 50 A/µs 50 A/µs 60 A/µs 50 240 A/µs 0 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 Instantaneous Forward Voltage (V) Junction Capacitance (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Reverse Switching Characteristics Revision: 24-Jun-2019 Document Number: 88767 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 CASE PIN 2 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) ITO-220AC 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 24-Jun-2019 Document Number: 88767 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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