UGB18BCTHE3_A/P

UG18xCT, UGF18xCT, UGB18xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES ITO-220AB • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 UG18xCT Series PIN 1 PIN 2 PIN 3 CASE 3 1 1 2 3 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) UGF18xCT Series PIN 1 PIN 2 • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 3 TO-263AB K • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 TYPICAL APPLICATIONS 1 UGB18xCT Series PIN 1 PIN 2 For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. K HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 18 A VRRM 50 V to 200 V IFSM 175 A trr 20 ns VF at IF 0.95 V Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT Max. repetitive peak reverse voltage VRRM 50 100 150 200 V Max. RMS voltage VRMS 35 70 105 140 V Max. DC blocking voltage VDC 50 100 150 200 V Max. average forward rectified current at TC = 105 °C IF(AV) 18 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 175 A TJ, TSTG -65 to +150 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 24-Feb-15 Document Number: 88759 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG18xCT, UGF18xCT, UGB18xCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT 9.0 A Max. instantaneous forward voltage per diode (1) UNIT 1.1 20 A TJ = 100 °C VF TA = 25 °C IR 1.2 5.0 A V 0.95 Max. DC reverse current at rated DC blocking voltage  per diode 10 TA = 100 °C Max. reverse recovery time  per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Max. reverse recovery time  per diode IF = 9.0 A, VR = 30 V,  dI/dt = 50 A/μs, Irr = 10 % IRM trr Max. stored charge per diode IF = 9.0 A, VR = 30 V,  dI/dt = 50 A/μs, Irr = 10 % IRM Typical junction capacitance per diode at 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C μA 300 20 ns 30 ns 50 20 Qrr nC 45 CJ 30 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL UG18 UGF18 UGB18 UNIT RJC 4.0 6.0 4.0 °C/W ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UG18DCT-E3/45 1.85 45 50/tube Tube ITO-220AB UGF18DCT-E3/45 2.00 45 50/tube Tube TO-263AB UGB18DCT-E3/45 1.35 45 50/tube Tube TO-263AB UGB18DCT-E3/81 1.35 81 800/reel Tape and reel TO-220AB UG18DCTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB UGF18DCTHE3/45 (1) 2.00 45 50/tube Tube TO-263AB UGB18DCTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB (1) 1.35 81 800/reel Tape and reel UGB18DCTHE3/81 Note AEC-Q101 qualified (1) Revision: 24-Feb-15 Document Number: 88759 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG18xCT, UGF18xCT, UGB18xCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 1000 Instantaneous Reverse Leakage Current (µA) Average Forward Current (A) Resistive or Inductive Load 20 16 12 8 4 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Stored Charge/Reverse Recovery Time (nC/ns) 1000 Peak Forward Surge Current (A) TJ = 125 °C 100 TC = 105 °C 8.3 ms Single Half Sine-Wave 100 10 1 10 60 50 dI/dt = 20 A/µs 40 50 A/µs 100 A/µs 50 A/µs 150 A/µs 30 20 20 A/µs 10 trr Qrr 0 0 100 150 A/µs 100 A/µs IF = 9.0 A VR = 30 V 25 50 75 100 125 150 175 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Reverse Switching Characteristics Per Diode 100 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Per Diode Revision: 24-Feb-15 Document Number: 88759 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG18xCT, UGF18xCT, UGB18xCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) 0.671 (17.04) 0.651 (16.54) PIN 1 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 3 0.245 (6.22) MIN. 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.076 (1.93) REF. 45° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 24-Feb-15 Document Number: 88759 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000