UH1DHE3_A/I

UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency Available • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 SMA (DO-214AC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V IFSM 30 A trr 25 ns VF at IF = 1.0 A 0.76 V TJ max. 175 °C Package SMA (DO-214AC) Diode variations Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UH1B UH1C UH1D HB HC HD 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V Revision: 21-Jul-17 Document Number: 89111 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER IF = 0.6 A TA = 25 °C Reverse current Rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 125 °C IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM TA = 25 °C Typical softness factor (tb/ta) IF = 1.0 A, dI/dt = 200 A/μs, VR = 200 V TA = 125 °C Typical stored charge Typical junction capacitance - 0.96 1.05 0.70 - 0.76 0.90 - 1.0 7.5 25 13 25 21 30 S 0.8 - IRM 2.7 4.0 A Qrr 35 - nC CJ 17 - pF UH1B UH1C UH1D UNIT TA = 125 °C IF = 1.0 A Typical reverse recovery current MAX. 0.90 VF (1) IF = 0.6 A Typical reverse recovery time TYP. TA = 25 °C IF = 1.0 A Instantaneous forward voltage SYMBOL 4.0 V, 1 MHz IR (2) trr UNIT V μA ns - Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance RθJA (1) 120 RθJM (1) 20 °C/W Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R θJA - junction to ambient, RθJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UH1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel UH1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel UH1DHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel UH1DHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel UH1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel UH1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel UH1DHM3_A/H (1) UH1DHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 21-Jul-17 Document Number: 89111 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 TL Measured at the Cathode Band Terminal 0.4 0.2 0 105 115 125 135 145 155 165 TA = 100 °C 1 TA = 25 °C 0.1 10 175 20 30 40 60 50 80 70 90 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 1.0 100 100 D = 0.3 D = 0.8 D = 0.5 Junction Capacitance (pF) 0.9 Average Power Loss (W) TA = 150 °C TA = 125 °C 10 0.01 95 0.8 D = 0.2 0.7 0.6 D = 1.0 D = 0.1 0.5 0.4 T 0.3 0.2 0.1 D = tp/T tp 0.8 1.0 0 0 0.2 0.4 0.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1.2 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 175 °C 100 TA = 125 °C 10 TA = 150 °C 1 TA = 175 °C TA = 100 °C 0.1 TA = 25 °C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 21-Jul-17 Document Number: 89111 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Jul-17 Document Number: 89111 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: UH1DHE3_A/H UH1DHE3_A/I