UH4PBC, UH4PCC
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Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
SMPC (TO-277A)
K
Cathode
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1
Anode 2
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For
use
in
high
frequency
rectification
and
freewheeling application in switching mode converters and
inverters for consumer computer, automotive, and
telecommunication applications.
3D 3D
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 2.0 A
VRRM
100 V, 150 V
IFSM
40 A
trr
25 ns
VF at IF = 2.0 A
0.77 V
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configurations
Common cathode
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VRRM
total device
per diode
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
IF(AV)
UH4PBC
UH4PCC
H4BC
H4CC
100
150
4.0
UNIT
V
A
2.0
IFSM
40
A
TJ, TSTG
-55 to +175
°C
Revision: 01-Apr-2020
Document Number: 88991
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UH4PBC, UH4PCC
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.0 A
TA = 25 °C
IF = 2.0 A
Instantaneous forward voltage
per diode
VF (1)
IF = 1.0 A
TA = 125 °C
IF = 2.0 A
TA = 25 °C
Reverse current per diode
Rated VR
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time per diode
Typical softness factor (tb/ta)per diode
SYMBOL
TA = 125 °C
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 0.1 IRM
IR (2)
TYP.
MAX.
0.84
-
0.93
1.05
0.68
-
0.77
0.85
-
5
6.4
25
20
25
24
-
UNIT
V
μA
ns
trr
S
0.3
-
-
IRM
5.4
-
A
Typical stored charge per diode
IF = 2 A, dI/dt = 200 A/μs,
VR = 200 V, Irr = 0.1 IRM
TA = 125 °C
Qrr
88
-
nC
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
21
-
pF
Typical reverse recovery current per diode
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance per device
RθJA
UH4PBC
(1)
UH4PCC
60
4
RθJL
UNIT
°C/W
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
UH4PCCHM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
UH4PCCHM3_A/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 01-Apr-2020
Document Number: 88991
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UH4PBC, UH4PCC
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Resistive or Inductive Load
4
3
2
TL measured
at the Cathode Band Terminal
1
TJ = 150 °C
TJ = 125 °C
10
1000
1
1st line
2nd line
2nd line
Instantaneous Reverse Current (µA)
Average Forward Rectified Current (A)
5
0.1
TJ = 25 °C
0.01
100
TJ = -40 °C
10
0.001
0
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
100
2.2
2.0
1.8
D = 0.3
1.6
D = 0.2
D = 1.0
1.4
D = 0.1
1.2
1.0
T
0.8
0.6
0.4
0.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
Junction Capacitance (pF)
Average Power Loss (W)
10000
100
D = tp/T
tp
1.6
2.0
10
0
0
0.4
1.2
0.4
0.1
2.4
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Axis Title
TJ = 150 °C
10
TJ = 125 °C
1000
1
TJ = 25 °C
100
0.1
TJ = -40 °C
0.01
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
10000
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 01-Apr-2020
Document Number: 88991
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UH4PBC, UH4PCC
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 01-Apr-2020
Document Number: 88991
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
1
Document Number: 91000
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