US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor
Surface Mount Ultra Fast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Ultrafast reverse recovery time
Available
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
30 A
trr
50 ns, 75 ns
VF at IF
1.0 V, 1.7 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Diode variations
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
US1A
US1B
US1D
US1G
US1J
US1K
US1M
UNIT
UA
UB
UD
UG
UJ
UK
UM
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL = 110 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
TJ, TSTG
-55 to +150
°C
Operating and storage temperature range
Revision: 21-Jul-17
Document Number: 88768
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
1.0 A
SYMBOL US1A US1B US1D US1G US1J US1K US1M
VF (1)
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
1.0
10
IR
TA = 100 °C
1.7
UNIT
V
μA
50
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
75
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
10
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D US1G US1J US1K US1M
Maximum thermal resistance
RθJA (1)
75
RθJL (1)
27
UNIT
°C/W
Note
(1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
61T
1800
7" diameter plastic tape and reel
US1J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
US1JHE3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
0.064
I
7500
13" diameter plastic tape and reel
US1J-E3/61T
US1JHE3_A/I
(1)
US1J-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
US1J-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
US1JHM3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
US1JHM3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 21-Jul-17
Document Number: 88768
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
1.2
100
1.0
0.8
0.6
0.4
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.2
TJ = 150 °C
Instantaneous Reverse Leakage
Current (µA)
Resistive or Inductive Load
0
TJ = 100 °C
1
0.1
US1A thru US1G
TJ = 25 °C
0.01
0
25
50
100
75
125
0
150
20
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
100
Instantaneous Forward Current (A)
TL = 110 °C
8.3 ms Single Half Sine-Wave
25
20
15
10
5
TJ = 150 °C
1
10
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 25 °C
0.1
TJ = -40 °C
US1J thru US1M
0.01
0
0.2
100
Number of Cycles at 60 Hz
0.7
1.2
1.7
2.2
2.7
3.2
3.7
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Instantaneous Forward Characteristics
100
1000
10
Instantaneous Reverse Leakage
Current (µA)
Instantaneous Forward Current (A)
40
Lead Temperature (°C)
30
Peak Forward Surge Current (A)
TJ = 125 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
TJ = -40 °C
US1A thru US1G
0.01
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
US1J thru US1M
0.1
TJ = 25 °C
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 - Typical Reverse Leakage Characteristics
Revision: 21-Jul-17
Document Number: 88768
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
US1A thru US1G
10
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
US1J thru US1M
1
0.1
1
10
10
1
0.1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Jul-17
Document Number: 88768
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000