US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor
Surface-Mount Ultrafast Rectifier
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Glass passivated pallet chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
SMA (DO-214AC)
Cathode
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
3D 3D
Design Tools
Related
Documents
3D Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
A
Models
Available
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Application
Notes
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
Marking
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
1.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
30 A
trr
50 ns, 75 ns
VF at IF
1.0 V, 1.7 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configurations
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
US1A
US1B
US1D
US1G
US1J
US1K
US1M
UA
UB
UD
UG
UJ
UK
UM
UNIT
100
200
400
600
800
1000
V
V
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Maximum average forward rectified current at TL = 110 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
TJ, TSTG
-55 to +150
°C
Operating and storage temperature range
V
Revision: 08-Apr-2020
Document Number: 88768
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
1.0 A
SYMBOL US1A US1B US1D US1G US1J US1K US1M
VF (1)
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
1.0
10
IR
TA = 100 °C
1.7
UNIT
V
μA
50
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
75
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
10
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D US1G US1J US1K US1M
Maximum thermal resistance
RθJA (1)
75
RθJL (1)
27
UNIT
°C/W
Note
PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
61T
1800
7" diameter plastic tape and reel
US1J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
US1JHE3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
US1JHE3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
US1J-E3/61T
US1J-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
US1J-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
US1JHM3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
US1JHM3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 08-Apr-2020
Document Number: 88768
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
2nd line
Instantaneous Reverse Current (µA)
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.2
0
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1000
1
1st line
2nd line
Average Forward Rectified Current (A)
10000
100
1.2
0.1
TJ = 25 °C
100
TJ = -40 °C
0.01
US1A thru US1G
10
0.001
0
25
50
100
75
125
150
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
Axis Title
100
20
15
10
5
10000
TJ = 150 °C
TJ = 125 °C
10
1000
TJ = 100 °C
1st line
2nd line
TL = 110 °C
8.3 ms Single Half Sine-Wave
25
2nd line
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
30
1
TJ = 25 °C
100
TJ = -40 °C
0.1
US1J thru US1K
0
10
0.01
10
100
0.2
Number of Cycles at 60 Hz
0.7
1.2
1.7
Axis Title
1000
TJ = 100 °C
1
TJ = 25 °C
100
TJ = -40 °C
0.1
US1A thru US1G
0.7
0.9
1.1
1.3
1.5
10
1.7
2nd line
Instantaneous Reverse Current (µA)
TJ = 125 °C
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
TJ = 150 °C
0.5
3.7
10000
1000
10000
0.3
3.2
Fig. 5 - Typical Instantaneous Forward Characteristics
Axis Title
100
0.01
2.7
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10
2.2
TJ = 150 °C
100
TJ = 125 °C
10
1000
TJ = 100 °C
1st line
2nd line
1
1
TJ = 25 °C
0.1
100
0.01
TJ = -40 °C
US1J thru US1M
0.001
0
20
40
60
80
10
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Leakage Characteristics
Revision: 08-Apr-2020
Document Number: 88768
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
US1A thru US1G
10
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
US1J thru US1M
1
0.1
1
10
10
1
0.1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 08-Apr-2020
Document Number: 88768
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000