US1MHE3_A/H

US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated pallet chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability SMA (DO-214AC) Cathode Anode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 LINKS TO ADDITIONAL RESOURCES 3D 3D Design Tools Related Documents 3D Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A Models Available • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Application Notes TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. Marking PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A trr 50 ns, 75 ns VF at IF 1.0 V, 1.7 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configurations Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UA UB UD UG UJ UK UM UNIT 100 200 400 600 800 1000 V V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL = 110 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +150 °C Operating and storage temperature range V Revision: 08-Apr-2020 Document Number: 88768 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL US1A US1B US1D US1G US1J US1K US1M VF (1) TA = 25 °C Maximum DC reverse current at rated DC blocking voltage 1.0 10 IR TA = 100 °C 1.7 UNIT V μA 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M Maximum thermal resistance RθJA (1) 75 RθJL (1) 27 UNIT °C/W Note PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel US1J-E3/61T US1J-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Apr-2020 Document Number: 88768 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 2nd line Instantaneous Reverse Current (µA) Resistive or Inductive Load 1.0 0.8 0.6 0.4 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 0 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1000 1 1st line 2nd line Average Forward Rectified Current (A) 10000 100 1.2 0.1 TJ = 25 °C 100 TJ = -40 °C 0.01 US1A thru US1G 10 0.001 0 25 50 100 75 125 150 0 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title 100 20 15 10 5 10000 TJ = 150 °C TJ = 125 °C 10 1000 TJ = 100 °C 1st line 2nd line TL = 110 °C 8.3 ms Single Half Sine-Wave 25 2nd line Instantaneous Forward Current (A) Peak Forward Surge Current (A) 30 1 TJ = 25 °C 100 TJ = -40 °C 0.1 US1J thru US1K 0 10 0.01 10 100 0.2 Number of Cycles at 60 Hz 0.7 1.2 1.7 Axis Title 1000 TJ = 100 °C 1 TJ = 25 °C 100 TJ = -40 °C 0.1 US1A thru US1G 0.7 0.9 1.1 1.3 1.5 10 1.7 2nd line Instantaneous Reverse Current (µA) TJ = 125 °C 1st line 2nd line 2nd line Instantaneous Forward Current (A) TJ = 150 °C 0.5 3.7 10000 1000 10000 0.3 3.2 Fig. 5 - Typical Instantaneous Forward Characteristics Axis Title 100 0.01 2.7 Instantaneous Forward Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 10 2.2 TJ = 150 °C 100 TJ = 125 °C 10 1000 TJ = 100 °C 1st line 2nd line 1 1 TJ = 25 °C 0.1 100 0.01 TJ = -40 °C US1J thru US1M 0.001 0 20 40 60 80 10 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Revision: 08-Apr-2020 Document Number: 88768 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p US1A thru US1G 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 US1J thru US1M 1 0.1 1 10 10 1 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 7 - Typical Junction Capacitance Fig. 8 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 08-Apr-2020 Document Number: 88768 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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