USB260HM3/5BT

USB260 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models For use in high frequency rectification, and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 600 V IFSM 90 A trr 30 ns VF at IF 1.0 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL USB260 UNIT U60 Device marking code Maximum repetitive peak reverse voltage VRRM 600 V Maximum RMS voltage VRMS 420 V Maximum DC blocking voltage VDC 600 V Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 90 A Non-repetitive avalanche energy at IAS = 2.0 A, L = 10 mH, TJ = 25 °C EAS 20 mJ TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 09-Apr-2020 Document Number: 89483 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 USB260 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage Instantaneous forward voltage IR = 10 μA TJ = 25 °C IF = 1 A TJ = 25 °C TJ = 25 °C IF = 2.0 A VR = 600 V Maximum reverse current SYMBOL TYP. VBR MAX. VF (1) V 1.25 - 1.5 1.6 TJ = 125 °C 1.0 1.1 TJ = 25 °C - 5.0 30 100 TJ = 125 °C UNIT 600 (minimum) IR (2) V μA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 30 ns Typical junction capacitance 4.0 V, 1 MHz CJ 45 pF SYMBOL USB260 UNIT RθJA (1) 45 RθJL (1) 10 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance °C/W Note (1) Units mounted on PCB with 2.0" x 2.0" copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE USB260-M3/52T 0.096 52T 750 7" diameter plastic tape and reel USB260-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel USB260HM3/52T 0.096 52T 750 7" diameter plastic tape and reel USB260HM3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel Revision: 09-Apr-2020 Document Number: 89483 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 USB260 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 100 2.0 1.0 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0 80 90 100 110 120 130 140 10000 TJ = 150 °C TJ = 125 °C 10 1000 1 1st line 2nd line 2nd line Instantaneous Forward Current (A) Average Forward Rectified Current (A) 3.0 TJ = 25 °C 100 TJ = -40 °C 0.1 10 0.01 150 0.1 Lead Temperature (°C) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics Axis Title D = 0.3 2.5 D = 0.2 D = 1.0 2.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 100 TJ = 150 °C 10 TJ = 125 °C 1000 1st line 2nd line D = 0.8 2nd line Instantaneous Reverse Current (µA) D = 0.5 Average Power Loss (W) 10000 1000 3.0 1 TJ = 25 °C 0.1 100 TJ = -40 °C 0.01 10 0.001 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics Axis Title 10000 80 1000 60 40 100 20 10 0 1 10 100 Junction Capacitance (pF) 1000 1st line 2nd line 2nd line Peak Forward Surge Current (A) 100 100 10 1 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Revision: 09-Apr-2020 Document Number: 89483 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 USB260 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 09-Apr-2020 Document Number: 89483 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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