V10P10-M3/86A

V10P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per LF maximum peak of 260 °C SMPC (TO-277A) K Anode 1 Cathode Anode 2 DESIGN SUPPORT TOOLS J-STD-020, • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 180 A EAS 100 mJ VF at IF = 10 A 0.574 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V10P10 UNIT V1010 Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave  superimposed on rated load IFSM 180 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 100 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction temperature range TJ (1) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 14-Jan-2019 Document Number: 89006 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10P10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1 mA IF = 5 A Instantaneous forward voltage IF = 10 A IF = 5 A IF = 10 A VR = 70 V Reverse current VR = 100 V SYMBOL TYP. MAX. UNIT VBR 100 (minimum) - V 0.512 - TA = 25 °C TA = 25 °C VF (1) TA = 125 °C 0.625 0.68 0.453 - V 0.574 0.62 TA = 25 °C 7.1 - μA TA = 125 °C 4.5 - mA 30.4 150 μA 10.4 20 mA TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance V10P10 RJA (1) 60 RJL 3 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel V10P10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel V10P10HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel V10P10HM3_A/I(1) 0.10 I 6500 13" diameter plastic tape and reel V10P10-M3/86A Note AEC-Q101 qualified (1) Revision: 14-Jan-2019 Document Number: 89006 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10P10 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 100 Instantaneous Reverse Current (mA) 12 Average Forward Current (A) Resistive or Inductive Load 10 8 6 4 TL measured at the Cathode Band Terminal 2 0 25 50 75 100 0.1 TJ = 25 °C 0.01 125 150 10 175 20 30 40 50 60 70 80 90 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 8 7 100 10 000 D = 0.5 D = 0.8 D = 0.3 D = 0.2 6 D = 0.1 Junction Capacitance (pF) Average Power Loss (W) TJ = 125 °C 1 0.001 0 D = 1.0 5 4 3 T 2 1 D = tp/T 1000 tp 0 100 0 1 2 3 4 5 6 7 8 9 10 11 12 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C TJ = -40 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TJ = 150 °C 10 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 14-Jan-2019 Document Number: 89006 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10P10 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 14-Jan-2019 Document Number: 89006 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000