V10P45S-M3
www.vishay.com
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.34 V at IF = 5 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
45 V
IFSM
180 A
VF at IF = 10 A
0.41 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
LINKS TO ADDITIONAL RESOURCES
3D 3D
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
3D Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
V10P45S
UNIT
1045S
VRRM
45
IF (1)
10
IF (2)
4.4
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
180
A
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
TJ (3)
≤ 200
°C
Operating junction temperature range
TOP
-40 to +150
°C
Storage temperature range
TSTG
-40 to +175
°C
Maximum DC forward current
V
A
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 02-Nov-2020
Document Number: 89341
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P45S-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5.0 A
TA = 25 °C
IF = 10 A
Instantaneous forward voltage
VF (1)
IF = 5.0 A
TA = 125 °C
IF = 10 A
TA = 25 °C
VR = 45 V
Reverse current
SYMBOL
TA = 125 °C
IR (2)
TYP.
MAX.
0.42
-
UNIT
0.48
0.57
0.34
-
0.41
0.50
21
800
μA
9
35
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
V10P45S
RθJA (1)
75
RθJM (2)
4
UNIT
°C/W
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance R
θJA - junction-to-ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
θJM - junction-to-mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V10P45S-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V10P45S-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
Revision: 02-Nov-2020
Document Number: 89341
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P45S-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
10000
RthJM = 4.0 °C/W
6.0
9
8
1000
7
6
RthJA = 75 °C/W
5
4
100
3
2
0
0
25
50
75
D = 0.5
D = 0.3
5.0
1000
D = 1.0
D = 0.2
4.0
3.0
D = 0.1
100
2.0
T
1.0
TM measured at cathode
terminal mount typical values
1
2nd line
Average Power Loss (W)
10
10000
D = 0.8
1st line
2nd line
11
7.0
1st line
2nd line
2nd line
Average Forward Rectified Current (A)
12
D = tp/T
10
100
125
tp
10
0
150
0
1
2
3
4
5
6
7
8
9 10 11 12
Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; T measured at the terminal of cathode band (R
M
θJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area (R
θJA = 75 °C/W)
Axis Title
Axis Title
10000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
TJ = 100 °C
100
1
TJ = 25 °C
10000
1000
1st line
2nd line
1000
10
2nd line
Junction Capacitance (pF)
TJ = 150 °C
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
100
1000
100
TJ = -40 °C
10
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
100
0.1
0.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
10000
100
100
10000
TJ = 100 °C
TJ = 125 °C
TJ = 150 °C
1000
0.1
0.01
TJ = 25 °C
100
0.001
TJ = -40 °C
0.0001
10
0.00001
20
30
40
50
60
70
80
90
100
1000
1st line
2nd line
1
2nd line
Transient Thermal Impedance (°C/W)
10
1st line
2nd line
2nd line
Instantaneous Reverse Current (mA)
Junction to ambient
10
100
1
0.01
10
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 02-Nov-2020
Document Number: 89341
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P45S-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 02-Nov-2020
Document Number: 89341
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
