V10PL45-M3/87A

V10PL45-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMPC (TO-277A) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K Anode 1 Cathode Anode 2 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. ADDITIONAL RESOURCES 3D 3D MECHANICAL DATA 3D Models Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 200 A VF at IF = 10 A 0.35 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range (AC mode) V10PL45 UNIT V10L45 VRRM 45 IF (1) 10 IF (2) 6.0 IFSM 200 TJ, TSTG -40 to +150 V A °C Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 30-Oct-2019 Document Number: 89479 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PL45-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A TA = 25 °C IF = 10 A Instantaneous forward voltage VF (1) IF = 5.0 A TA = 125 °C IF = 10 A TA = 25 °C VR = 45 V Reverse current SYMBOL TA = 125 °C IR (2) TYP. MAX. 0.39 - 0.44 0.52 0.28 - 0.35 0.43 - 5.0 30 75 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V10PL45 RJA (1) 68 RJM (2) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction-to-ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V10PL45-M3/86A PREFERRED P/N 0.10 86A 1500 7" diameter plastic tape and reel V10PL45-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel 5.0 12 D = 0.2 TM = 130 °C 10 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8 TA = 25 °C 6 4 2 D = 0.3 D = 0.5 D = 0.8 D = 0.1 4.0 D = 1.0 3.0 2.0 T 1.0 D = tp/T 0 tp 0.0 0 25 50 75 100 125 150 175 TM - Mount Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 2 4 6 8 10 12 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Notes (1) Mounted on 30 mm x 30 mm aluminum PCB; T M measured at the terminal of cathode band (RJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (RJA = 68 °C/W) Revision: 30-Oct-2019 Document Number: 89479 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PL45-M3 www.vishay.com Vishay General Semiconductor TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 000 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 1000 TA = -40 °C 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 1000 TA = 150 °C TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C TA = -40 °C 0.01 0.001 20 30 40 50 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Fig. 3 - Typical Instantaneous Forward Characteristics 10 60 70 80 90 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) 100 10 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 30-Oct-2019 Document Number: 89479 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PL45-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 30-Oct-2019 Document Number: 89479 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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