V12P10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automatic placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
100 V
IFSM
200 A
EAS
100 mJ
VF at IF = 12 A
0.58 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
V12P10
UNIT
V1210
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
12
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
100
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
TJ, TSTG
-40 to +150
°C
Operating junction and storage temperature range
Revision: 18-Dec-2019
Document Number: 88981
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P10
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
IF = 5 A
IF = 12 A
Instantaneous forward voltage
IF = 5 A
IF = 12 A
VR = 70 V
Reverse current
VR = 100 V
TA = 25 °C
SYMBOL
TYP.
MAX.
VBR
100 (minimum)
-
0.50
-
0.65
0.70
0.43
-
0.58
0.64
7.0
-
μA
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
IR (2)
TA = 125 °C
UNIT
V
4.4
-
mA
21.3
250
μA
11.8
20
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
(1)
RJL
V12P10
60
UNIT
°C/W
3
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
86A
1500
7" diameter plastic tape and reel
V12P10-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
V12P10HM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
0.10
I
6500
13" diameter plastic tape and reel
V12P10-M3/86A
V12P10HM3_A/I
(1)
Note
(1) AEC-Q101 qualified
Revision: 18-Dec-2019
Document Number: 88981
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P10
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Axis Title
Resistive or Inductive Load
12
10
8
6
TL measured
at the Cathode Band Terminal
4
2
10000
TJ = 150 °C
10
TJ = 125 °C
1
1000
TJ = 100 °C
0.1
0.01
100
TJ = 25 °C
0.001
0.0001
TJ = -40 °C
0.00001
0
100
110
120
130
140
10
10
150
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
10
10 000
D = 0.3
D = 0.5 D = 0.8
9
Junction Capacitance (pF)
D = 0.2
Average Power Loss (W)
100
1st line
2nd line
2nd line
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
14
8
7
D = 0.1
D = 1.0
6
5
4
T
3
2
D = tp/T
1
1000
tp
0
100
0
2
4
6
8
10
12
14
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
100
10000
10
TJ = 150 °C
1000
1
TJ = 125 °C
100
0.1
TJ = 25 °C
TJ = -40 °C
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Dec-2019
Document Number: 88981
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P10
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 18-Dec-2019
Document Number: 88981
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000