V12P8
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.42 V at IF = 6 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
12 A
VRRM
80 V
IFSM
200 A
VF at IF = 12 A (TA = 125 °C)
0.54 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
V12P8
UNIT
V128
VRRM
80
IF (1)
12
IF (2)
4.3
IFSM
200
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
V
A
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
Revision: 18-Dec-2019
Document Number: 87714
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 6.0 A
TA = 25 °C
IF = 12 A
Instantaneous forward voltage
VF (1)
IF = 6.0 A
TA = 125 °C
IF = 12 A
TA = 25 °C
VR = 80 V
Reverse current
SYMBOL
TA = 125 °C
IR (2)
TYP.
MAX.
0.49
-
0.58
0.66
0.42
-
0.54
0.62
-
1
12
30
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
V12P8
(1)(2)
75
RJM (3)
UNIT
°C/W
4
Notes
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
(2) Free air mounted on recommended copper pad area; thermal resistance R
JA - junction-to-ambient
(3) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM - junction-to-mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V12P8-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V12P8-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
V12P8HM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
V12P8HM3_A/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 18-Dec-2019
Document Number: 87714
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
1000
8
6
TA = 25 ƱC RthJA = 75 °C/W
100
4
2
TM measured at cathode
terminal mount typical values
0
0
25
50
75
10
100
125
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1000
1
1st line
2nd line
10
2nd line
Instantaneous Reverse Current (mA)
TM = 122 ƱC RthJM = 4 °C/W
12
10000
100
10000
1st line
2nd line
2nd line
Average Forward Rectified Current (A)
14
0.1
TJ = 25 °C
0.01
TJ = -40 °C
0.001
0.0001
10
20
150
40
60
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
Axis Title
10 000
10000
10000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
8.0
1st line
2nd line
1000
D = 0.2
5.0
D = 1.0
D = 0.1
3.0
100
T
2.0
1.0
D = tp/T
1000
1st line
2nd line
D = 0.3
2nd line
Junction Capacitance (pF)
D = 0.5
7.0
4.0
100
Percent of Rated Peak Reverse Voltage (%)
Axis Title
6.0
80
Mount Temperature (°C)
9.0
2nd line
Average Power Loss (W)
100
1000
100
tp
0
100
10
10
0.1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
10000
1000
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
100
TJ = 25 °C
TJ = -40 °C
0.1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
10000
Junction to Ambient
1000
1st line
2nd line
10
2nd line
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
10
100
1
0.01
10
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Dec-2019
Document Number: 87714
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 18-Dec-2019
Document Number: 87714
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000
