V12P12
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 6 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
120 V
IFSM
150 A
EAS
100 mJ
VF at IF = 12 A
0.63 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
V12P12
UNIT
V1212
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig. 1)
IF(AV)
12
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 °C
EAS
100
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
IRRM
0.5
A
TJ, TSTG
-40 to +150
°C
Revision: 11-Dec-2019
Document Number: 89094
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P12
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
IF = 6 A
SYMBOL
TYP.
MAX.
UNIT
VBR
120 (minimum)
-
V
0.57
-
0.72
0.80
0.51
-
0.63
0.70
TA = 25 °C
13
-
μA
TA = 125 °C
7
-
mA
50
500
μA
16
50
mA
TA = 25 °C
IF = 12 A
Instantaneous forward voltage
TA = 25 °C
VF (1)
IF = 6 A
TA = 125 °C
IF = 12 A
VR = 90 V
Reverse current
VR = 120 V
TA = 25 °C
IR (2)
TA = 125 °C
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RθJA
Typical thermal resistance
V12P12
(1)
60
RθJL
4
UNIT
°C/W
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V12P12-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V12P12-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
V12P12HM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
V12P12HM3_A/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 11-Dec-2019
Document Number: 89094
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P12
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
10000
100
Resistive or Inductive Load
12
10
8
6
TL Measured
at the Cathode Band Terminal
4
2
0
100
110
120
130
140
10
TJ = 150 °C
TJ = 125 °C
1
0.1
100
0.01
TJ = 25 °C
0.001
TJ = -40 °C
10
0.0001
150
20
40
Lead Temperature (°C)
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
10 000
11
D = 0.3
10
D = 0.2
9
8
D = 0.1
7
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.5 D = 0.8
Junction Capacitance (pF)
Average Power Loss (W)
1000
TJ = 100 °C
1 t li
2nd line
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
14
D = 1.0
6
5
T
4
3
2
D = tp/T
1
1000
100
tp
10
0
0
2
4
6
8
10
12
0.1
14
1
10
100
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
100
10000
T J = 150 °C
10
1000
T J = 125 ° C
1
T J = 100 °C
100
T J = 25 °C
0.1
T J = -40 °C
0.01
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 11-Dec-2019
Document Number: 89094
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P12
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 11-Dec-2019
Document Number: 89094
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000