V12PM12HM3_A/H

V12PM12 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 6 A FEATURES • Very low profile - typical height of 1.1 mm eSMP® Series Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C 1 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMPC (TO-277A) K Anode 1 Cathode Anode 2 DESIGN SUPPORT TOOLS J-STD-020, TYPICAL APPLICATIONS click logo to get started For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. MECHANICAL DATA Models Available PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 120 V IFSM 160 A VF at IF = 12 A 0.63 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X”) denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V12PM12 UNIT 12M12 VRRM 120 V (1) 12 IF (2) 4.1 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 160 A Operating junction temperature range TJ (3) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Maximum DC forward current IF A Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 29-Jan-2019 Document Number: 89938 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12PM12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 6 A VF (1) IF = 6 A TA = 125 °C IF = 12 A TA = 25 °C VR = 90 V TA = 125 °C Reverse current VR = 120 V Typical junction capacitance TYP. TA = 25 °C IF = 12 A Instantaneous forward voltage SYMBOL TA = 25 °C IR (2) TA = 125 °C 4.0 V, 1 MHz CJ MAX. UNIT 0.60 - 0.75 0.83 0.53 - 0.63 0.71 3 - μA 2 - mA - 500 μA 5 35 mA 950 - pF V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance V12PM12 (1)(2) 62 RJM (3) UNIT °C/W 4 Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R JA - junction to ambient (3) Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V12PM12-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel 0.10 87A 6500 13" diameter plastic tape and reel 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6500 13" diameter plastic tape and reel V12PM12-M3/87A V12PM12HM3_A/H (1) V12PM12HM3_A/I (1) Note (1) Automotive grade Revision: 29-Jan-2019 Document Number: 89938 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12PM12 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10000 TM measured at cathode terminal mount typical values 10 1000 8 6 RthJA = 62 °C/W 100 4 2 10 0 0 25 50 75 100 125 150 TJ = 150 °C 10 TJ = 125 °C 1 100 0.01 TJ = 25 °C 0.001 TJ = -40 °C 10 0.0001 20 40 60 Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10000 10000 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 D = 0.2 D = 1.0 D = 0.1 4.0 100 T 2.0 D = tp/T 10 4 6 8 1000 100 100 tp 0 2 1000 1st line 2nd line D = 0.3 2nd line Junction Capacitance (pF) 8.0 1st line 2nd line 10 12 10 14 0.1 1 10 100 10 1000 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 TJ = 175 °C 1000 10 TJ = 150 °C TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 10000 Junction to Ambient 1000 1st line 2nd line 10000 100 2nd line Transient Thermal Impedance (°C/W) 2nd line Average Power Loss (W) 100 Percent of Rated Peak Reverse Voltage (%) D = 0.5 2nd line Instantaneous Forward Current (A) 80 Mount Temperature (°C) D = 0.8 0 1000 TJ = 100 °C 0.1 175 10.0 6.0 10000 TJ = 175 °C 1st line 2nd line 12 2nd line Instantaneous Reverse Current (mA) 100 RthJM = 4.0 °C/W 1st line 2nd line 2nd line Average Forward Rectified Current (A) 14 10 100 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 29-Jan-2019 Document Number: 89938 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12PM12 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 29-Jan-2019 Document Number: 89938 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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