V12PM15HM3/H

V12PM15 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, SMPC (TO-277A) • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 K Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode Anode 2 TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 12.0 A VRRM 150 V IFSM 200 A VF at IF = 12.0 A (TA = 125 °C) 0.66 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V12PM15 UNIT 12M15 VRRM 150 IF (1) 12.0 IF (2) 4.7 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range TJ (3) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Maximum average forward rectified current (fig. 1) V A Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT