V12PM45HM3/H

V12PM45 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 6 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, SMPC (TO-277A) • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 K Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode Anode 2 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 12.0 A VRRM 45 V IFSM 200 A VF at IF = 12.0 A (TA = 125 °C) 0.46 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V12PM45 UNIT 12M45 VRRM 45 IF (1) 12.0 IF (2) 5.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range TJ (3) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V A Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT