V15KL45C-M3/H

V15KL45C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.32 V at IF = 5 A FEATURES 1 2 • Trench MOS Schottky technology 3 4 8 7 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C 6 5 Available J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 FlatPAK 5 x 6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1, 2 5, 6, 7, 8 3, 4 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 7.5 A VRRM 45 V IFSM 140 A VF at IF = 7.5 A (TA = 125 °C) 0.36 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Common cathode Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test   MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V15KL45C UNIT 15L45C VRRM 45 V IF(AV) (1) 15 A IF(AV) (2) 5.6 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 140 A Operating junction temperature range TJ (3) -40 to +150 °C Storage temperature range TSTG -55 to +150 °C Maximum DC forward current per device Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 01-Aug-2019 Document Number: 87481 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15KL45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode TA = 25 °C IF = 7.5 A VF (1) IF = 5 A TA = 125 °C IF = 7.5 A Reverse current per diode VR = 45 V Typical junction capacitance per diode 4.0 V, 1 MHz SYMBOL TA = 25 °C TA = 125 °C IR (2) CJ TYP. MAX. 0.43 - 0.46 0.54 0.32 - 0.36 0.44 - 2 16 40 1700 - UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Thermal resistance per device (1)(2) RJM (3) TYP. MAX. 75 - 2.5 3.5 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction-to-ambient (3) Mounted on infinite heat sink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V15KL45C-M3/H 0.10 H 1500 7" diameter plastic tape and reel V15KL45C-M3/I 0.10 I 6000 13" diameter plastic tape and reel 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6000 13" diameter plastic tape and reel V15KL45CHM3/H (1) V15KL45CHM3/I (1) Note (1) AEC-Q101 qualified Revision: 01-Aug-2019 Document Number: 87481 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15KL45C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 1000 10 8 RthJA = 75 °C/W 6 100 4 2 TM measured at cathode terminal mount typical values 10 0 0 25 50 75 100 125 10 1 TJ = 100 °C 1000 0.1 TJ = 25 °C 100 0.01 0.001 TJ = -40 °C 10 0.0001 20 150 40 60 80 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title Axis Title 10000 3.5 10 000 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.5 D = 0.2 1000 1st line 2nd line D = 1.0 2.0 D = 0.1 1.5 100 1.0 T 1000 1st line 2nd line D = 0.3 2.5 2nd line Junction Capacitance (pF) 3.0 2nd line Average Power Loss (W) TJ = 150 °C TJ = 125 °C 1st line 2nd line RthJM = 2.5 °C/W 12 2nd line Instantaneous Reverse Current (mA) 14 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 16 1000 100 0.5 D = tp/T tp 7 9 10 0 0 1 2 3 4 5 6 8 10 100 0.1 10 1 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 10000 1000 10 TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 10000 Junction to ambient 1000 1st line 2nd line TJ = 150 °C 100 2nd line Transient Thermal Impedance (°C/W) 100 2nd line Instantaneous Forward Current (A) 10 10 100 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 01-Aug-2019 Document Number: 87481 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15KL45C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 4 x L2 FlatPAK 5 x 6 E E1 F2 7 8 M E2 6 (d1) F2 F1 F1 3 4 4 x L1 2 (8 x a) 1 2 1 0.219 (5.550) D2 BOTTOM VIEW TOP VIEW 0.050 (1.270) 0.030 (0.750) PCB FOOTPRINT Θ A c 8x 3 0.039 (1.000) 4 (K) (2 x d2) 0.022 (0.560) 5 0.082 (2.080) 0.259 (6.590) 6xe 5 (E3) 2 x b1 6 0.191 (4.840) 7 8 0.180 (4.560) 0.030 (0.750) 8xb 0.055 (1.400) D D1 SIDE VIEW DIM. INCHES MILLIMETERS MIN. NOM. MAX. MIN. NOM. MAX. A 0.035 0.039 0.043 0.89 0.99 1.09 (a) - 0.006 - - 0.15 - b 0.013 0.017 0.020 0.32 0.43 0.52 b1 0.013 0.017 0.020 0.32 0.43 0.52 c 0.008 - 0.014 0.20 - 0.35 D 0.197 0.203 0.209 5.00 5.15 5.30 D1 0.189 0.193 0.197 4.80 4.90 5.00 4.30 D2 0.154 0.161 0.169 3.90 4.10 (d1) - 0.016 - - 0.40 - (d2) - 0.005 - - 0.125 - E 0.238 0.244 0.250 6.05 6.20 6.35 E1 0.228 0.232 0.236 5.80 5.90 6.00 E2 0.157 0.165 0.173 4.00 4.20 4.40 (E3) - 0.144 - - 3.65 - e 0.050 BSC 1.27 BSC (K) 0.039 - - 1.00 - - L1 0.019 - 0.043 0.48 - 1.10 L2 0.012 - 0.031 0.30 - 0.80 M 0.128 0.138 0.148 3.25 3.50 3.75  0° - 10° 0° - 10° Notes • Dimensioning and tolerancing per ASME Y14.5-2009 • Dimensions D1 and E1 do not include mold flash or gate burrs • Dimension (XX) means reference only Revision: 01-Aug-2019 Document Number: 87481 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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