V15P45S-M3/87A

V15P45S-M3 www.vishay.com Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifiers Ultra Low VF = 0.31 V at IF = 5 A FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 SMPC (TO-277A) K Anode 1 Cathode Anode 2 • High efficiency operation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES 3D 3D For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA 3D Models PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 45 V IFSM 210 A VF at IF = 15 A 0.42 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V15P45S UNIT 1545S VRRM 45 IF (1) 15 IF (2) 4.8 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 210 A Junction temperature in DC forward current without reverse bias, t ≤ 1 h TJ (3) ≤ 200 °C Operating junction temperature range TOP -40 to +150 °C Storage temperature range TSTG -40 to +175 °C Maximum DC forward current V A Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 02-Nov-2020 Document Number: 89343 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage VF (1) IF = 5.0 A TA = 125 °C IF = 7.5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current TA = 125 °C IR (2) TYP. MAX. 0.40 - 0.45 - 0.49 0.58 0.31 - UNIT V 0.34 - 0.42 0.51 - 1500 μA 15 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V15P45S RθJA (1) 75 RθJM (2) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R θJA - junction to ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V15P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V15P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel Revision: 02-Nov-2020 Document Number: 89343 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 10000 12.0 D = 0.8 10.0 TM measured at cathode terminal mount typical values 1000 10 100 RthJA = 75 °C/W 5 D = 0.5 D = 0.3 8.0 1000 D = 0.2 1st line 2nd line 15 2nd line Average Power Loss (W) RthJM = 4.0 °C/W 1st line 2nd line 2nd line Average Forward Rectified Current (A) 20 D = 1.0 6.0 D = 0.1 100 4.0 T 2.0 D = tp/T 10 0 0 25 50 75 100 125 tp 10 0 150 0 2 4 6 8 10 12 14 16 18 Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Notes (1) Mounted on 30 mm x 30 mm aluminum PCB; T measured at the terminal of cathode band (R M θJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (R θJA = 75 °C/W) Axis Title Axis Title 10000 10 000 10000 1000 10 TJ = 125 °C TJ = 100 °C 100 1 TJ = 25 °C 1000 1st line 2nd line TJ = 150 °C 2nd line Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1st line 2nd line 2nd line Instantaneous Forward Current (A) 100 1000 100 TJ = -40 °C 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 100 0.1 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 10000 1000 10000 100 1 TJ = 100 °C 1000 TJ = 150 °C TJ = 125 °C 0.1 TJ = 25 °C 0.01 100 0.001 TJ = -40 °C 0.0001 10 0.00001 20 30 40 50 60 70 80 90 100 10 1000 1 100 1st line 2nd line 10 2nd line Transient Thermal Impedance (°C/W) 100 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) Junction to ambient 0.1 0.01 10 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 02-Nov-2020 Document Number: 89343 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 02-Nov-2020 Document Number: 89343 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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