V1PL45
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
®
• Very low profile - typical height of 0.65 mm
eSMP Series
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
A
Top View
• Meets MSL level 1, per
LF maximum peak of 260 °C
Bottom View
MicroSMP (DO-219AD)
Anode
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
3D Models
PRIMARY CHARACTERISTICS
1.0 A
MECHANICAL DATA
VRRM
45 V
IFSM
25 A
VF at IF = 1.0 A (125 °C)
0.36 V
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IF(AV)
TJ max.
150 °C
Package
MicroSMP (DO-219AD)
Circuit configuration
Single
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
V1PL45
1LE
Maximum repetitive peak reverse voltage
VRRM
45
Maximum DC forward current
IF(AV)
1.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
25
TJ (1), TSTG
-40 to +150
Operating junction and storage temperature range
UNIT
V
A
°C
Note
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
Revision: 03-Aug-2020
Document Number: 87642
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V1PL45
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.5 A
IF = 1.0 A
Instantaneous forward voltage per diode
IF = 0.5 A
IF = 1.0 A
Reverse current per diode
VR = 45 V
Typical junction capacitance
4.0 V, 1 MHz
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TYP.
MAX.
0.41
-
0.45
0.53
0.30
-
0.36
0.44
-
0.25
2
10
200
-
IR (2)
TA = 125 °C
CJ
UNIT
V
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
V1PL45
(1)(2)
UNIT
130
RJM (3)
°C/W
20
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R
D
J
JA
(2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, R
JA - junction to ambient
(3) Mounted on FR4 PCB, 2 oz. standard footprint, R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V1PL45M3/H
0.006
H
4500
7" diameter plastic tape and reel
V1PL45HM3/H (1)
0.006
H
4500
7" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
1.2
0.5
D = 0.8
TM =142 ƱC, RthJM =20 ƱC/W
1.0
D = 0.5
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
0.8
0.6
TA =25 ƱC, RthJA =130 ƱC/W
0.4
0.2
0.4
D = 0.3
D = 1.0
D = 0.2
0.3
0.2
D = 0.1
T
0.1
TM measured at cathode terminal mount
typical values
D = tp/T
0
tp
0.0
0
25
50
75
100
125
150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
Average Forward Current (A)
Fig. 2 - Average Power Loss Characteristics
Revision: 03-Aug-2020
Document Number: 87642
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V1PL45
www.vishay.com
Vishay General Semiconductor
1000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
TJ = -40 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.8
1
Instantaneous Forward Voltage (V)
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Fig. 5 - Typical Junction Capacitance
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
TJ = -40 °C
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
10
100
1000
Junction to ambient
100
10
1
0.01
0.1
Percent of Rated Peak Reverse Voltage (%)
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP (DO-219AD)
0.059 (1.50)
0.043 (1.10)
Cathode Band
0.055 (1.40)
0.047 (1.20)
0.030 (0.75)
0.022 (0.55)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.030 (0.75)
0.022 (0.55)
Mounting Pad Layout
0.079
(2.00)
0.029 (0.73)
0.025 (0.63)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
Revision: 03-Aug-2020
Document Number: 87642
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000